AP4413GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
SO-8
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
S
S
G
-20V
30mΩ
-7.8A
D
I
D
Description
AP4413 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
-20
+20
-7.8
-6.2
-30
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Drain Current, V
GS
@ 10V
3
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Unit
℃/W
1
201501084
Data and specifications subject to change without notice
AP4413GM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-7A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-2A
Min.
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
16
-
-
-
17
4
7
12
11
40
13
250
210
4.3
Max. Units
-
30
40
65
-1.5
-
-1
-25
+100
27
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-7A
V
DS
=-20V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-7A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-2A
R
G
=3.3
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V, V
GS
=0V
1140 1820
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-2A, V
GS
=0V
I
S
=-7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
22
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
2
AP4413GM-HF
120
90
T
A
= 25
o
C
100
-10V
80
T
A
= 150 C
o
-10V
-7.0V
-7.0V
70
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
80
60
-5.0V
50
60
-5.0V
-4.5V
-4.5V
40
30
40
20
V
G
= - 2.5 V
20
V
G
= - 2.5 V
10
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.6
60
I
D
=-4A
T
A
=25
℃
Normalized R
DS(ON)
I
D
=-7A
V
G
=-10V
1.4
R
DS(ON)
(m
Ω
)
50
1.2
40
1.0
30
0.8
20
10
0
2
4
6
8
10
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
7
6
5
4
T
j
=150
o
C
3
T
j
=25
o
C
-V
GS(th)
(V)
1.2
1.4
2
-I
S
(A)
1
2
1
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4413GM-HF
10
2000
f=1.0MHz
I
D
= -7A
V
DS
= -16V
-V
GS
, Gate to Source Voltage (V)
8
1600
6
C (pF)
1200
C
iss
4
800
2
400
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
-I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=125
o
C/W
1s
T
A
=25 C
Single Pulse
o
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4413GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
4413GM
YWWSSS
5
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