®
ST13007FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
HIGH VOLTAGE CAPABILITY
NPN TRANSISTOR
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
3
1
2
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
≤
25 C
Storage Temperature
Max. O perating Junction Temperature
o
Value
700
400
9
8
16
4
8
36
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
June 1998
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ST13007FP
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
3.47
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= rated V
CEV
V
CE
= rated V
CEV
V
EB
= 9 V
I
C
= 10 mA
I
C
I
C
I
C
I
C
=
=
=
=
2
5
8
5
A
A
A
A
I
B
I
B
I
B
I
B
=
=
=
=
0.4 A
1 A
2 A
1 A
400
1
2
3
3
1.2
1.6
1.5
15
26
5
1.6
60
2.3
110
28
40
30
2.5
110
ms
ns
µs
ns
T
c
= 100 C
o
Min.
Typ .
Max.
1
5
1
Un it
mA
mA
mA
V
V
V
V
V
V
V
V
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
V
CE(sat )
∗
Collector-Emitter
Saturation Voltage
T
c
= 100
o
C
V
BE(s at)
∗
Base-Emitter
Saturation Voltage
DC Current G ain
I
C
= 2 A
I
C
= 5 A
I
C
= 5 A
I
C
= 2 A
Group A
Group B
I
C
= 5 A
I
C
= 5 A
I
B1
= 1 A
L = 200
µH
I
C
= 5 A
I
B1
= 1 A
L = 200
µH
I
B
= 0.4 A
I
B
= 1 A
I
B
= 1 A
V
CE
= 5 V
T
c
= 100 C
o
h
FE
∗
V
CE
= 5 V
V
CL
= 250 V
I
B2
= -2 A
V
CL
= 250 V
I
B2
= -2 A
o
T
c
= 125 C
t
s
t
f
t
s
tf
INDUCTIVE LOAD
Storage Time
Fall T ime
INDUCTIVE LOAD
Storage Time
Fall T ime
* Pulsed: Pulse duration = 300
µs,
duty cycle 2 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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