BD533/535/537
BD533/535/537
Medium Power Linear and Switching
Applications
• Low Saturation Voltage
• Complement to BD534, BD536 and BD538 respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
1.Base
Value
45
60
80
45
60
80
45
60
80
5
8
1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
°C
°C
V
CES
Collector-Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
Parameter
Collector Cut-off Current : BD533
: BD535
: BD537
Collector Cut-off Current : BD533
: BD535
: BD537
Emitter Cut-off Current
* DC Current Gain
: BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
: ALL DEVICE
: ALL DEVICE
Test Condition
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
20
15
40
25
15
30
15
40
20
0.8
1.5
3
12
75
100
0.8
V
V
V
MHz
Min.
Typ.
Max.
100
100
100
100
100
100
1
Units
µA
µA
µA
µA
µA
µA
mA
I
CES
I
EBO
h
FE
h
FE
h
FE
Groups
J
K
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
I
C
= 2A, I
B
= 0.2A
I
C
= 6A, I
B
= 0.6A
V
CE
= 2V, I
C
= 2A
V
CE
= 1V, I
C
= 500mA
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD533/535/537
Typical characteristics
1000
1
100
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
0.1
10
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
1.8
V
BE
(sat)[V], SATURATION VOLTAGE
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.1
I
C
= 10 I
B
I
C
[A], COLLECTOR CURRENT
10
I
C
Max.
10
ms
1m
s
10
µ
s
100
µ
s
DC
1
0.1
1
10
1
10
BD533
BD535
BD537
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Microcontroller MCU
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