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EMG1

Description
General purpose (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size54KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

EMG1 Overview

General purpose (dual digital transistors)

EMG1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-107
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-F5
JESD-609 codee2
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
EMG1 / UMG1N / FMG1A
Transistors
General purpose (dual digital transistors)
EMG1 / UMG1N / FMG1A
Features
1) Two DTC124E chips in a EMT or UMT or SMT
package.
External dimensions
(Unit : mm)
EMG1
0.22
(4)
(3)
(2)
Circuit schematic
0.13
(5)
1.2
1.6
(1)
EMG1 / UMG1N
(3)
(2)
(1)
FMG1A
(3)
(4)
(5)
R
1
R
2
R
2
R
1
R
1
R
2
R
2
R
1
ROHM : EMT5
Each lead has same dimensions
(4)
(5)
(2)
(1)
R
1
=
R
2
=22kΩ
R
1
=
R
2
=22kΩ
(4)
(3)
0.65 0.65
UMG1N
0.2
1.3
0.9
0.5
1.25
2.1
(1)
0to0.1
0.5 0.5
1.0
1.6
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMG1 / UMG1N
FMG1A
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
40
−10
30
100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
0.15
V
V
mA
mA
mW
ROHM : UMT5
EIAJ : SC-88A
(5)
0.1Min.
Each lead has same dimensions
∗1
∗2
Junction temperature
Storage temperature
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
°C
°C
FMG1A
0.95 0.95
1.9
(2)
(3)
0.3
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
(1)
1.6
2.8
EMG1
EMT5
G1
T2R
8000
UMG1N
UMT5
G1
TR
3000
FMG1A
SMT5
G1
T148
3000
0.15
(5)
(4)
0.3to0.6
0to0.1
ROHM : SMT5
EIAJ : SC-74A
Each lead has same dimensions
0.8
1.1
2.9
0.7
Rev.A
2.0
(2)
1/2

EMG1 Related Products

EMG1 FMG1A UMG1N
Description General purpose (dual digital transistors) General purpose (dual digital transistors) General purpose (dual digital transistors)
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Parts packaging code SC-107 SC-74A SC-88A
package instruction SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G5
Contacts 5 5 5
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.03 A 0.03 A 0.03 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 56 56 56
JESD-30 code R-PDSO-F5 R-PDSO-G5 R-PDSO-G5
Number of components 2 2 2
Number of terminals 5 5 5
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
JESD-609 code e2 e1 -
Terminal surface Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) -
Maker - ROHM Semiconductor ROHM Semiconductor

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