BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
MAY 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD646
Collector-base voltage (I
E
= 0)
BD648
BD650
BD652
BD646
Collector-emitter voltage (I
B
= 0)
BD648
BD650
BD652
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
j
T
stg
T
L
2
SYMBOL
VALUE
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
-65 to +150
-65 to +150
260
UNIT
V
CBO
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD646
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD648
BD650
BD652
V
CE
= -30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -50 V
V
CE
= -60 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
CBO
Collector cut-off
current
V
CB
= -120 V
V
CB
= -40 V
V
CB
= -50 V
V
CB
= -60 V
V
CB
= -70 V
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
V
EB
=
V
CE
=
I
B
=
I
B
=
I
B
=
V
CE
=
-5 V
-3 V
-12 mA
-50 mA
-50 mA
-3 V
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-3 A
-3 A
-5 A
-5 A
-3 A
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
-2
-2.5
-3
-2.5
V
V
V
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
MIN
-60
-80
-100
-120
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
-5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.0
62.5
UNIT
°C/W
°C/W
PRODUCT
INFORMATION
2
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
50000
TCS135AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-2·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
TCS135AB
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
-1·5
1000
-1·0
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
100
-0·5
-1·0
I
C
- Collector Current - A
-10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
-3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS135AC
-2·5
-2·0
-1·5
-1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
I
C
- Collector Current - A
-10
Figure 3.
PRODUCT
INFORMATION
3
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-10
SAS135AC
I
C
- Collector Current - A
-1·0
-0·1
-0.01
-1·0
BD646
BD648
BD650
BD652
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS130AC
Figure 5.
PRODUCT
INFORMATION
4
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
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