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BD679

Description
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size137KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BD679 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD679 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionPLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Maximum ambient power consumption40 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor750
Rated crossover frequency1 MHz
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