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BD679

Description
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size114KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BD679 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD679 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
VCEsat-Max2.5 V
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High DC Current Gain —
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,
678, 678A, 680, 680A, 682
BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
Plastic Medium-Power
Silicon NPN Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Operating and Storage Junction
Temperating Range
Total Device Dissipation
@TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Thermal Resistance, Junction to Case
Rating
Characteristic
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
5.0
PD, POWER DISSIPATION (WATTS)
IC
IB
10
40
50
15
20
25
30
35
45
0
15
30
BD675
BD675A
Figure 1. Power Temperature Derating
45
45
45
Symbol
θ
JC
BD677
BD677A
60
TC, CASE TEMPERATURE (°C)
– 55 to + 150
60
60
75
40
0.32
0.1
4.0
5.0
BD679
BD679A
90
80
80
3.13
Max
105
BD681
120
100
100
135
_
C/W
Watts
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
150
165
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS
40 WATTS
BD675
BD675A
BD677
BD677A
BD679
BD679A
BD681*
*Motorola Preferred Device
CASE 77–08
TO–225AA TYPE
Order this document
by BD675/D
1

BD679 Related Products

BD679 BD675 BD675A BD677 BD679A
Description 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 4A, 45V, NPN, Si, POWER TRANSISTOR, TO-225AA 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-hole THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE single SINGLE SINGLE SINGLE
transistor applications AMPLIFIER switch AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON silicon SILICON SILICON SILICON
Is it Rohs certified? incompatible - incompatible - incompatible
Maker Motorola ( NXP ) - - Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow - unknown unknow unknow
ECCN code EAR99 - EAR99 - EAR99
Maximum collector current (IC) 4 A - 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V - 45 V 60 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR - DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 750 - 750 750 750
JEDEC-95 code TO-225AA - TO-225AA TO-225AA TO-225AA
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 - e0 e0 e0
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN - NPN NPN NPN
Maximum power consumption environment 40 W - 40 W 40 W 40 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) - TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
VCEsat-Max 2.5 V - 2.8 V 2.5 V 2.8 V
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