BD680 datasheet, PDF - EEWORLD Datasheet

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BD680: Description4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126; CategoryDiscrete semiconductor The transistor; File Size112KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BD680 Overview

4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126

BD680 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-225AA
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	40 W
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
VCEsat-Max	2.5 V

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•

High DC Current Gain —

hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

•

Monolithic Construction

•

BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,

677, 677A, 679, 679A, 681

•

BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

. . . for use as output devices in complementary general–purpose amplifier applica-

tions.

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Silicon PNP Darlingtons

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

THERMAL CHARACTERISTICS

MAXIMUM RATING

REV 7

Operating and Storage Junction

Temperating Range

Total Device Dissipation

@ TC = 25

Derate above 25

Base Current

Collector Current

Emitter–Base Voltage

Collector–Base Voltage

Collector–Emitter Voltage

Thermal Resistance, Junction to Case

Rating

Characteristic

Symbol

TJ, Tstg

VCEO

VCB

VEB

5.0

PD, POWER DISSIPATION (WATTS)

BD676

BD676A

Figure 1. Power Temperature Derating

Symbol

BD678

BD678A

TC, CASE TEMPERATURE (°C)

– 55 to + 150

0.32

0.1

4.0

5.0

BD680

BD680A

3.13

Max

105

BD682

100

120

135

C/W

Watts

Unit

Adc

Vdc

150

165

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLTS

40 WATTS

BD676

BD676A

BD678

BD678A

BD680

BD680A

BD682

CASE 77–08

TO–225AA TYPE

Order this document

by BD676/D

BD676 BD676A BD678 BD678A BD680 BD680A BD682

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE:

Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

MFAX:

RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET:

http://Design–NET.com

JAPAN:

Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

HONG KONG:

Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

◊

Motorola Bipolar Power Transistor Device Data

*BD676/D*

BD676/D

BD680 Related Products

	BD680	BD676	BD678	BD678A	BD680A	BD682
Description	4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126	POWER TRANSISTOR	4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126	4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-hole
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	single
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	amplifier
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	silicon
Maker	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	-
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	-
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A	-
Collector-emitter maximum voltage	80 V	45 V	60 V	60 V	80 V	-
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	-
Minimum DC current gain (hFE)	750	750	750	750	750	-
JEDEC-95 code	TO-225AA	TO-225AA	TO-225AA	TO-225AA	TO-225AA	-
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	-
JESD-609 code	e0	e0	e0	e0	e0	-
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	-
Maximum power consumption environment	40 W	40 W	40 W	40 W	40 W	-
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W	40 W	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz	-
VCEsat-Max	2.5 V	-	2.5 V	2.8 V	2.8 V	-

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