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BD678

Description
4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size112KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BD678 Overview

4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126

BD678 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max2.5 V
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High DC Current Gain —
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,
677, 677A, 679, 679A, 681
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Silicon PNP Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATING
REV 7
Operating and Storage Junction
Temperating Range
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Thermal Resistance, Junction to Case
Rating
Characteristic
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
IC
IB
5.0
PD, POWER DISSIPATION (WATTS)
10
40
50
15
20
25
30
35
45
0
15
BD676
BD676A
30
Figure 1. Power Temperature Derating
45
45
45
Symbol
θ
JC
BD678
BD678A
60
TC, CASE TEMPERATURE (°C)
– 55 to + 150
60
60
40
0.32
75
0.1
4.0
5.0
BD680
BD680A
90
80
80
3.13
Max
105
BD682
100
100
120
135
_
C/W
Watts
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
150
165
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
CASE 77–08
TO–225AA TYPE
Order this document
by BD676/D
1

BD678 Related Products

BD678 BD676 BD678A BD680 BD680A BD682
Description 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 POWER TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-hole
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE single
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER amplifier
Transistor component materials SILICON SILICON SILICON SILICON SILICON silicon
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) -
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code unknow unknow unknow unknow unknow -
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A -
Collector-emitter maximum voltage 60 V 45 V 60 V 80 V 80 V -
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR -
Minimum DC current gain (hFE) 750 750 750 750 750 -
JEDEC-95 code TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA -
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 -
JESD-609 code e0 e0 e0 e0 e0 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type PNP PNP PNP PNP PNP -
Maximum power consumption environment 40 W 40 W 40 W 40 W 40 W -
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W 40 W -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified -
surface mount NO NO NO NO NO -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz 10 MHz 10 MHz -
VCEsat-Max 2.5 V - 2.8 V 2.5 V 2.8 V -
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