BD675A/677A/679A/681
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
TO-126
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD675A
: BD677A
: BD679A
: BD681
: BD675A
: BD677A
: BD679A
: BD681
1
1. Emitter
Value
45
60
80
100
45
60
80
100
5
4
6
100
40
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
Collector-Base Voltage
: BD675A
: BD677A
: BD679A
: BD681
: BD675A
: BD677A
: BD679A
: BD681
: BD675A/677A/679A
: BD681
Test Condition
I
C
= 50mA, I
B
= 0
Min.
45
60
80
100
200
200
200
200
500
500
500
500
2
750
750
2.8
2.5
2.5
2.5
V
V
V
V
Typ.
Max.
Units
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, V
BE
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 100V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
I
C
= 2A, I
B
= 40mA
I
C
= 1.5A, I
B
= 30mA
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 1.5A
I
CEO
Collector Cut-off Current
I
EBO
h
FE
V
CE
(sat)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD681
* Base-Emitter ON Voltage : BD675A/677A/679A
: BD681
V
BE
(on)
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BD675A/677A/679A/681
Typical Characteristics
10000
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= 3V
2.4
Ic = 250 I
B
2.0
h
FE
, DC CURRENT GAIN
1.6
1000
1.2
0.8
0.4
100
0.1
1
10
0.0
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
4.0
3.8
V
CE
= 3V
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
10
I
C
(max). Pulsed
I
C
(max). Continuous
10
µ
s
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
DC
100
µ
s
1
BD675A
BD677A
BD679A
BD681
0.1
1
10
1ms
10ms
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
50
P
C
[W], POWER DISSIPATION
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
MCU
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