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BD680A

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BD680A Overview

POWER TRANSISTOR

BD680A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD676A/678A/680A/682
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD676A
: BD678A
: BD680A
: BD682
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 45
- 60
- 80
- 100
- 45
- 60
- 80
- 100
-5
-4
-6
- 100
14
88
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C/W
°C
°C
V
CEO
Collector-Emitter Voltage : BD676A
: BD678A
: BD680A
: BD682
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Thermal Resistance (Junction to Ambient)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
R
θja
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
Collector-Base Voltage
: BD676A
: BD678A
: BD680A
: BD682
Test Condition
I
C
= - 50mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 200
- 200
- 200
- 200
- 500
- 500
- 500
- 500
-2
750
750
- 2.8
- 2.5
- 2.5
- 2.5
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
Typ.
Max.
Units
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, V
BE
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
C
= - 2A, I
B
= - 40mA
I
C
= - 1.5A, I
B
= - 30mA
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
I
CEO
Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
Emitter Cut-off Current
* DC Current Gain
: BD676A/678A/680A
: BD682
I
EBO
h
FE
V
CE
(sat)
* Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682
* Base-Emitter On Voltage : BD676A/678A/680A
: BD682
V
BE
(on)
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002

BD680A Related Products

BD680A BD676A 0761557118_17 BD682
Description POWER TRANSISTOR POWER TRANSISTOR Impact 100 Ohm 4 Pair Vertical Backplane Header, Left Guided, Right Endwall 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Is it Rohs certified? incompatible incompatible - incompatible
Parts packaging code SIP SIP - SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 - 3
Reach Compliance Code unknow unknow - unknown
ECCN code EAR99 EAR99 - EAR99
Shell connection ISOLATED ISOLATED - ISOLATED
Maximum collector current (IC) 4 A 4 A - 4 A
Collector-emitter maximum voltage 80 V 45 V - 100 V
Configuration DARLINGTON DARLINGTON - DARLINGTON
Minimum DC current gain (hFE) 750 750 - 750
JEDEC-95 code TO-126 TO-126 - TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Maximum operating temperature 150 °C 150 °C - 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type PNP PNP - PNP
Maximum power dissipation(Abs) 40 W 40 W - 40 W
Certification status Not Qualified Not Qualified - Not Qualified
surface mount NO NO - NO
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
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