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Datasheet> All Categories > Discrete semiconductor> The transistor> BD743B
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BD743B

Description
15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220
CategoryDiscrete semiconductor    The transistor   
File Size92KB，6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
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BD743B Overview

15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220

BD743B Parametric

Parameter NameAttribute value
MakerPower Innovations Limited
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

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BD743, BD743A, BD743B, BD743C
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD744 Series
90 W at 25°C Case Temperature
15 A Continuous Collector Current
20 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
q
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD743
Collector-base voltage (I
E
= 0)
BD743A
BD743B
BD743C
BD743
Collector-emitter voltage (I
B
= 0)
BD743A
BD743B
BD743C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
A
T
j
T
stg
T
L
2
SYMBOL
VALUE
50
70
90
110
45
60
80
100
5
15
20
5
90
2
90
-65 to +150
-65 to +150
-65 to +150
250
UNIT
V
CBO
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
°C
This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BD743B Related Products

BD743B BD743 BD743A BD743C
Description 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 15 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Maker Power Innovations Limited Power Innovations Limited Power Innovations Limited Power Innovations Limited
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A 15 A 15 A
Collector-emitter maximum voltage 80 V 45 V 60 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 5 5 5 5
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON

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