BDP 951
NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
Type
BDP 951
BDP 953
BDP 955
Marking Ordering Code
BDP 951 Q62702-D1339
BDP 953 Q62702-D1341
PDP 955 Q62702-D1343
Pin Configuration
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
Package
SOT-223
SOT-223
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
BDP 951
BDP 953
BDP 955
Collector-base voltage
BDP 951
BDP 953
BDP 955
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 99°C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient
1)
Symbol
Values
80
100
120
Unit
V
V
CEO
V
CBO
100
120
140
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJA
R
thJS
1
5
3
5
200
500
3
150
- 65 ... + 150
≤
42
≤
17
W
°C
mA
A
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
Semiconductor Group
Nov-28-1996
BDP 951
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
V
80
100
120
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
20
100
-
25
40
15
-
475
-
V
-
0.8
1.5
nA
µA
nA
-
I
C
= 10 mA,
I
B
= 0 mA, BDP 951
I
C
= 10 mA,
I
B
= 0 mA, BDP 953
I
C
= 10 mA,
I
B
= 0 mA, BDP 955
Collector-base breakdown voltage
V
(BR)CBO
I
C
100 µA,
I
B
= 0 , BDP 951
I
C
= 100 µA,
I
B
= 0 , BDP 953
I
C
= 100 µA,
I
B
= 0 , BDP 955
Base-emitter breakdown voltage
100
120
140
V
(BR)EBO
5
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
I
CBO
-
-
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 25 °C
V
CB
= 100 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
I
EBO
h
FE
V
EB
= 4 V,
I
C
= 0
DC current gain
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V
Collector-emitter saturation voltage 1)
V
CEsat
V
BEsat
-
I
C
= 2 A,
I
B
= 0.2 A
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
AC Characteristics
Transition frequency
f
T
-
100
25
-
MHz
pF
-
-
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
C
cb
V
CB
= 10 V,
f
= 1 MHz
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Nov-28-1996
BDP 951
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
Permissible Pulse Load
R
thJS
=
f(t
p
)
3.2
10
3
K/W
W
T
S
T
A
R
thJS
10
2
P
tot
2.4
2.0
10
1
1.6
10
0
1.2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0.8
10
-1
0.4
0.0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
10
-2
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f(t
p
)
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 2V
10
3
10
3
-
-
P
totmax
/P
totDC
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
h
FE
10
2
100°C
25°C
-50°C
10
1
10
1
10
0
-6
10
10
-5
10
-4
10
-3
10
-2
10
s 10
t
p
-1
0
10
0
0
10
10
1
10
2
10
3
mA
I
C
Semiconductor Group
3
Nov-28-1996
BDP 951
Collector cutoff current
I
CBO
=
f
(T
A
)
V
CB
= 45V
Collector-emitter saturation voltage
I
C
= f (V
CEsat
),
h
FE
= 10
10
5
nA
10
4
mA
10
4
I
CBO
10
3
max
10
2
I
C
10
3
100°C
25°C
-50°C
10
2
10
1
typ
10
1
10
0
10
-1
0
20
40
60
80
100
120 °C 150
T
A
10
0
0.0
0.2
0.4
V
0.8
V
CEsat
Base-emitter saturation voltage
I
C
= f (V
BEsat
),
h
FE
= 10
Collector current
I
C
=
f
(V
BE
)
V
CE
= 2V
10
4
10
4
mA
mA
I
C
10
3
-50°C
25°C
100°C
10
2
I
C
10
3
10
2
-50°C
25°C
100°C
10
1
10
1
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
V
BEsat
10
0
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
V
BE
Semiconductor Group
4
Nov-28-1996
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