LAB
MECHANICAL DATA
Dimensions in mm(inches)
10.41 (0.410)
10.67 (0.420)
4.83 (0.190)
5.08 (0.200)
0.89 (0.035)
1.14 (0.045)
16.38 (0.645)
16.89 (0.665)
13.38 (0.527)
13.64 (0.537)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
SEME
BDS10IG
BDS11IG
BDS12IG
SILICON NPN
EPITAXIAL BASE IN
TO257 METAL PACKAGE
1 2 3
12.07 (0.500)
19.05 (0.750)
FEATURES
• HERMETIC TO257 ISOLATED METAL
PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
• SCREENING TO CECC LEVELS
• ALSO AVAILABLE IN TO220 METAL AND
TO220 CERAMIC SURFACE MOUNT
PACKAGES
TO257
– TO257 Isolated Metal Package.
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
BDS10
60V
60V
BDS11
80V
80V
5V
15A
5A
90W
BDS12
100V
100V
–65 TO 200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/98
LAB
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
SEME
BDS10IG
BDS11IG
BDS12IG
Parameter
I
CBO
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
V
EB
= 5V
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
Min.
Typ.
Max.
500
500
500
1
1
1
1
Unit
m
A
I
CEO
mA
I
EBO
mA
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
BDS10
Collector - Emitter
BDS11
sustaining voltage (I
B
= 0)
BDS12
Collector - Emitter
I
C
= 5A
saturation voltage
I
C
= 10A
Base - Emitter
I
C
= 10A
saturation voltage
Base - Emitter voltage
I
C
= 5A
I
C
= 0.5A
DC Current gain
I
C
= 5A
I
C
= 10A
Transition frequency
I
C
= 0.5A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
B
= 2.5A
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
60
80
100
1
3
2.5
1.5
250
150
V
V
V
V
40
15
5
3
MHz
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
t
on
t
s
t
r
On Time
Storage Time
Fall Time
(t
d
+ t
r
)
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
= –I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
m
s
m
s
m
s
THERMAL DATA
R
THj-case
R
THcase-sink
R
THj-a
Thermal resistance junction - case
Thermal resistance case - heatsink **
Thermal resistance junction - ambient
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
** Smooth flat surface using thermal grease.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 9/98
Embedded System
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