LAB
MECHANICAL DATA
Dimensions in mm
1 0.6
0.8
4.6
16.5
3.6
Dia.
1 3 .5
1 0 .6
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
2 .5 4
BSC
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
2. 70
BSC
3 .6 0 (0 .1 4 2 )
M a x .
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6
(0 .0 3 0 )
m in .
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M
- TO220 Metal Package - Isolated
SMD1
- Ceramic Surface Mount Package
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
BDS10
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Semelab plc.
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
60V
60V
BDS11
BDS12
80V
100V
80V
100V
5V
15A
5A
90W
–65 to 200°C
200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
LAB
Parameter
I
CBO
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Test Conditions
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
V
EB
= 5V
V
CB
= 60V
V
CB
= 80V
V
CB
= 100V
V
CE
= 30V
V
CE
= 40V
V
CE
= 50V
Min.
Typ.
Max.
500
500
500
1
1
1
1
Unit
m
A
I
CEO
mA
I
EBO
mA
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
BDS10
Collector - Emitter
BDS11
sustaining voltage (I
B
= 0)
BDS12
Collector - Emitter
I
C
= 5A
saturation voltage
I
C
= 10A
Base - Emitter
I
C
= 10A
saturation voltage
Base - Emitter voltage
I
C
= 5A
I
C
= 0.5A
DC Current gain
I
C
= 5A
I
C
= 10A
Transition frequency
I
C
= 0.5A
I
C
= 100mA
I
B
= 0.5A
I
B
= 2.5A
I
B
= 2.5A
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
60
80
100
1
3
2.5
1.5
250
150
V
V
V
V
40
15
5
3
MHz
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
t
on
t
s
t
r
On Time
Storage Time
Fall Time
(t
d
+ t
r
)
Test Conditions
I
C
= 4A V
CC
= 30V I
B1
= 0.4A
I
C
= 4A V
CC
= 30V
I
B1
= –I
B2
= 0.4A
Max.
0.7
1.0
0.8
Unit
m
s
m
s
m
s
THERMAL DATA
R
THj-case
R
THcase-sink
R
THj-a
Thermal resistance junction - case
Thermal resistance case - heatsink **
Thermal resistance junction - ambient
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
** Smooth flat surface using thermal grease.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
MCU
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