BDS19SMD datasheet, PDF - EEWORLD Datasheet

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BDS19SMD: Description8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-276AB; Categorysemiconductor Discrete semiconductor; File Size67KB，3 Pages; ManufacturerSEME-LAB; Websitehttp://www.semelab.co.uk

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BDS19SMD Overview

8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-276AB

BDS19SMD Parametric

Parameter Name	Attribute value
Maximum collector current	8 A
Maximum Collector-Emitter Voltage	150 V
Number of terminals	3
Processing package description	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
state	Active
Shell connection	COLLECTOR
structure	SINGLE
Minimum DC amplification factor	15
jedec_95_code	TO-276AB
jesd_30_code	R-CBCC-N3
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED
packaging shape	RECTANGULAR
Package Size	CHIP CARRIER
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	PNP
wer_dissipation_max__abs_	50 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
terminal coating	NOT SPECIFIED
Terminal form	NO LEAD
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	10 MHz
dditional_feature	HIGH RELIABILITY

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BDS18 BDS18SMD

BDS19 BDS19SMD

MECHANICAL DATA

Dimensions in mm

1 0.6

0.8

4.6

16.5

3.6

Dia.

1 3 .5

1 0 .6

SILICON PNP

EPITAXIAL BASE IN

TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

1 23

1 3 .7 0

• HERMETIC METAL OR CERAMIC

PACKAGES

1.0

2 .5 4

BSC

2. 70

BSC

• HIGH RELIABILITY

• MILITARY AND SPACE OPTIONS

• SCREENING TO CECC LEVELS

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

3 .6 0 (0 .1 4 2 )

M a x .

• FULLY ISOLATED (METAL VERSION)

0 .7 6

(0 .0 3 0 )

m in .

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

APPLICATIONS

• POWER LINEAR AND SWITCHING

APPLICATIONS

• GENERAL PURPOSE POWER

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

TO220M

SMD1

Pin 1

– Base

- TO220 Metal Package - Isolated

- SMD1 Ceramic Surface Mount Package

Pin 2

– Collector

Pin 3

– Emitter

ABSOLUTE MAXIMUM RATINGS

case

=25°C unless otherwise stated)

CBO

CEO

EBO

, I

tot

stg

Semelab plc.

Collector - Base voltage (I

= 0)

Collector - Emitter voltage (I

= 0)

Emitter - Base voltage (I

= 0)

Emitter , Collector current

Base current

Total power dissipation at T

case

75°C

Storage Temperature

Junction Temperature

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

BDS18

–120V

BDS19

–150V

–5V

–8A

–2A

50W

–65 TO 200°C

200°C

4/00

BDS19SMD Related Products

	BDS19SMD	BDS18	BDS18SMD	BDS19
Description	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-276AB	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-257AB	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-257AB	8 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-257AB
Maximum collector current	8 A	8 A	8 A	8 A
Maximum Collector-Emitter Voltage	150 V	150 V	150 V	150 V
Number of terminals	3	3	3	3
Processing package description	HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	HERMETIC SEALED, METAL, TO-220M, 3 PIN	HERMETIC SEALED, METAL, TO-220M, 3 PIN	HERMETIC SEALED, METAL, TO-220M, 3 PIN
state	Active	Active	Active	Active
Shell connection	COLLECTOR	ISOLATED	ISOLATED	ISOLATED
structure	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	15	15	15	15
jedec_95_code	TO-276AB	TO-257AB	TO-257AB	TO-257AB
jesd_30_code	R-CBCC-N3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1	1	1
Maximum operating temperature	200 Cel	200 Cel	200 Cel	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED	METAL	METAL	METAL
packaging shape	RECTANGULAR	SQUARE	SQUARE	SQUARE
Package Size	CHIP CARRIER	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
larity_channel_type	PNP	PNP	PNP	PNP
wer_dissipation_max__abs_	50 W	50 W	50 W	50 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors
surface mount	YES	NO	NO	NO
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	NO LEAD	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	SINGLE	SINGLE	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Rated crossover frequency	10 MHz	10 MHz	10 MHz	10 MHz
dditional_feature	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY

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