BDW23/A/B/C
BDW23/A/B/C
Hammer Drivers, Audio Amplifiers
Applications
• Power Darlington TR
• Complement to BDW24, BDW24A, BDW24B and BDW24C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
V
CEO
Collector-Emitter Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
45
60
80
100
45
60
80
100
5
6
8
0.2
50
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: BDW23
: BDW23A
: BDW23B
: BDW23C
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
I
CEO
Collector Cut-off Current
: BDW23
: BDW23A
: BDW23B
: BDW23C
I
EBO
h
FE
Emitter Cut-off Current
* DC Current Gain
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 6A
I
C
= 2A, I
B
= 8mA
I
C
= 6A, I
B
= 60mA
I
C
= 2A, I
B
= 8mA
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 6A
I
F
= 2A
1000
750
100
500
500
500
500
2
20000
2
3
2.5
2.5
3
1.8
V
V
V
V
V
V
µA
µA
µA
µA
mA
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
200
200
200
200
µA
µA
µA
µA
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
Typ.
Max.
Unit
s
V
V
V
V
I
CBO
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
V
F
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW23/A/B/C
Typical Characteristics
10000
8.0
V
CE
= 3V
7.5
7.0
V
CE
= 3V
I
C
[A], COLLECTOR CURRENT
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
h
FE
, DC CURRENT GAIN
1000
100
0.1
1
10
0.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
100
V
CE
(sat)[V], SATURATION VOLTAGE
2.4
I
C
= 250 I
B
2.0
I
C
[A], COLLECTOR CURRENT
10
I
C
(max). Pulsed
I
C
(max).
Continuous
1.6
10
µ
s
1.2
100
µ
s
DC
0.8
1
0.4
BDW23
BDW23A
BDW23B
BDW23C
0.1
1
10
1ms
10ms
0.0
0.1
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
25
50
o
75
100
125
150
175
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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Preliminary
No Identification Needed
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©2000 Fairchild Semiconductor International
Rev. E
Microcontroller MCU
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