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MBRF10100

Description
10 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size238KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBRF10100 Overview

10 A, 100 V, SILICON, RECTIFIER DIODE

MBRF1030-MBRF10100
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 -
100
V
CURRENT: 10 A
Features
High s urge capacity.
15.2± 0.5
10.2± 0.2
ITO-220AC
4.5± 0.2
3.1
+0.2
-0.1
φ
3.3± 0.1
16.5± 0.3
High current capacity, low forward voltage drop.
13.5± 0.5
PIN
1
2
Guard ring for over voltage protection.
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
Metal s ilicon junction, m ajority carrier conduction.
Mechanical Data
Cas e:JEDEC
ITO-220AC,m
olded plas tic body
Polarity: As m arked
Pos ition: Any
Weight:
0.056 ounces,1.587 gram
5.0± 0.1
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
1030
1035 1040 1045 1050 1060 1090 10100
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 133°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=10A,T
C
=25
(I
F
=10A,T
C
=125
(I
F
=20A ,T
C
=25
(I
F
=20A ,T
C
=125
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
)
)
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
? 3.2± 0.2
2.6± 0.2
11
For us e in low voltage, high frequency inverters , free
1wheeling,
and polarity protection applications .
30
21
30
35
25
35
40
28
40
45
32
45
10
150
50
35
50
60
42
60
90
63
90
100
70
100
V
V
V
A
A
-
0.80
0.70
0.95
0.85
0.1
15
4.0
-
55
---- + 150
-
55
---- + 175
0.80
0.65
0.95
0.75
mA
/W
V
V
F
0.57
0.84
0.72
I
R
R
θJC
T
J
T
STG
6.0
3)
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T
C
=100
http://www.luguang.cn
mail:lge@luguang.cn

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MBRF10100 MBRF1030 MBRF1035 MBRF1040 MBRF1045 MBRF1050 MBRF1060 MBRF1090
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