EEWORLDEEWORLDEEWORLD

Part Number

Search

MBRF1060

Description
10 A, 60 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size238KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Compare View All

MBRF1060 Online Shopping

Suppliers Part Number Price MOQ In stock  
MBRF1060 - - View Buy Now

MBRF1060 Overview

10 A, 60 V, SILICON, RECTIFIER DIODE

MBRF1030-MBRF10100
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 -
100
V
CURRENT: 10 A
Features
High s urge capacity.
15.2± 0.5
10.2± 0.2
ITO-220AC
4.5± 0.2
3.1
+0.2
-0.1
φ
3.3± 0.1
16.5± 0.3
High current capacity, low forward voltage drop.
13.5± 0.5
PIN
1
2
Guard ring for over voltage protection.
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
Metal s ilicon junction, m ajority carrier conduction.
Mechanical Data
Cas e:JEDEC
ITO-220AC,m
olded plas tic body
Polarity: As m arked
Pos ition: Any
Weight:
0.056 ounces,1.587 gram
5.0± 0.1
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
1030
1035 1040 1045 1050 1060 1090 10100
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 133°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=10A,T
C
=25
(I
F
=10A,T
C
=125
(I
F
=20A ,T
C
=25
(I
F
=20A ,T
C
=125
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
)
)
)
)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
? 3.2± 0.2
2.6± 0.2
11
For us e in low voltage, high frequency inverters , free
1wheeling,
and polarity protection applications .
30
21
30
35
25
35
40
28
40
45
32
45
10
150
50
35
50
60
42
60
90
63
90
100
70
100
V
V
V
A
A
-
0.80
0.70
0.95
0.85
0.1
15
4.0
-
55
---- + 150
-
55
---- + 175
0.80
0.65
0.95
0.75
mA
/W
V
V
F
0.57
0.84
0.72
I
R
R
θJC
T
J
T
STG
6.0
3)
Maximum thermal resistance
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.T
C
=100
http://www.luguang.cn
mail:lge@luguang.cn

MBRF1060 Related Products

MBRF1060 MBRF1030 MBRF1035 MBRF1040 MBRF10100 MBRF1045 MBRF1050 MBRF1090
Description 10 A, 60 V, SILICON, RECTIFIER DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE 10 A, 35 V, SILICON, RECTIFIER DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 90 V, SILICON, RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 750  2307  538  1699  2231  16  47  11  35  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号