BDW93CF
BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
100
100
12
15
0.2
30
150
- 65 ~ 150
Units
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
(sus)
I
CBO
I
CEO
I
EBO
h
FE
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 100mA, I
B
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 5A
V
CE
= 3V, I
C
= 10A
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
I
C
= 5A, I
B
= 20mA
I
C
= 10A, I
B
= 100mA
I
F
= 5A
I
F
= 10A
1.3
1.8
1000
750
100
Min.
100
Typ.
Max.
100
1
2
20000
2
3
2.5
4
2
4
V
V
V
V
V
V
Units
V
µA
mA
mA
V
CE
(sat)
V
BE
(sat)
V
F
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDW93CF
Typical characteristics
100k
10
V
CE
= 3V
I
C
= 250 I
B
10k
V
CE
(sat) [V], SATURATION VOLTAGE
1
10
100
h
FE
, DC CURRENT GAIN
1
1k
100
0.1
0.1
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
20
1000
V
CE
= 3 V
16
f=1MHz
12
C
ob
[pF], OUTPUT CAPACTIANCE
I
E
=0
I
C
[A], COLLECTOR CURRENT
100
8
4
0
0.0
10
0.8
1.6
2.4
3.2
4.0
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector Output Capacitance
100
50
P
D
[W], POWER DISSIPATION
I
C
[A], COLLECTOR CURRENT
40
I
C
MAX.
100 us
10
DC
1 ms
30
20
1
5 ms
10
0.1
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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