BDX53/A/B/C
BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
1.Base
Value
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
200
200
200
200
500
500
500
500
2
750
2
2.5
1.8
2.5
2.5
V
V
V
V
Typ.
Max.
Units
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 3A, I
B
= 12mA
I
F
= 3A
I
F
= 8A
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BDX53/A/B/C
Typical Characteristics
100000
3.4
V
BE
(sat)[V], SATURATION VOLTAGE
V
CE
= 3V
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
C
= 250I
B
h
FE
, DC CURRENT GAIN
10000
1000
100
0.1
1
10
0.8
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
3.2
3.0
V
CE
(sat)[V], SATURATION VOLTAGE
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
1
I
C
= 250I
B
2.8
V
F
(sat)[V], FORWARD VOLTAGE
10
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
F
[A], FORWARD CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Damper Diode Forward Voltage
100
80
70
I
C
[A], COLLECTOR CURRENT
P
D
[W], POWER DISSIPATION
1000
I
C
Max. (Pulsed)
60
us
10
10
I
C
Max. (Continuous)
50
s
1m
100us
40
D
C
30
1
20
BDX53
BDX53A
BDX53B
BDX53C
0.1
1
10
100
10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
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®
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
DSP and ARM Processors
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