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BDX53B

Description
8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BDX53B Overview

8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BDX53B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)8 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
BDX53/A/B/C
BDX53/A/B/C
Hammer Drivers, Audio Amplifiers Applications
Power Liner and Switching Applications
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
1.Base
Value
45
60
80
100
45
60
80
100
5
8
12
0.2
60
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
°C
°C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Parallel Diode Forward Voltage
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
200
200
200
200
500
500
500
500
2
750
2
2.5
1.8
2.5
2.5
V
V
V
V
Typ.
Max.
Units
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CE
= 22V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 3A, I
B
= 12mA
I
F
= 3A
I
F
= 8A
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
F
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
©2000 Fairchild Semiconductor International
Rev. A, February 2000

BDX53B Related Products

BDX53B BDX53A BDX53 BDX53C
Description 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB POWER TRANSISTOR
Is it Rohs certified? incompatible incompatible incompatible conform to
Maker Fairchild Fairchild Fairchild Fairchild
Parts packaging code SFM SFM SFM TO-220
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3
Reach Compliance Code unknow unknow unknow compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 80 V 60 V 45 V 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE DARLINGTON WITH BUILT-IN DIODE DARLINGTON WITH BUILT-IN DIODE DARLINGTON WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 750 750 750 750
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 60 W 60 W 60 W 60 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz 20 MHz

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