EEWORLDEEWORLDEEWORLD

Part Number

Search

BDX53C

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size151KB,6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
Download Datasheet Parametric Compare View All

BDX53C Online Shopping

Suppliers Part Number Price MOQ In stock  
BDX53C - - View Buy Now

BDX53C Overview

POWER TRANSISTOR

BDX53C Parametric

Parameter NameAttribute value
MakerPower Innovations Limited
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDX54, BDX54A, BDX54B and BDX54C
60 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDX53
Collector-base voltage (I
E
= 0)
BDX53A
BDX53B
BDX53C
BDX53
Collector-emitter voltage (I
B
= 0)
BDX53A
BDX53B
BDX53C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
45
60
80
100
5
8
0.2
60
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BDX53C Related Products

BDX53C BDX53 BDX53A BDX53B
Description POWER TRANSISTOR 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Maker Power Innovations Limited Power Innovations Limited Power Innovations Limited Power Innovations Limited
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 100 V 45 V 60 V 80 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750 750
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Graphene, supercapacitors and 18650, if you still don’t understand, don’t go home for the New Year (Repost)
[i=s]This post was last edited by Bai Ding on 2016-2-5 22:59[/i] Reposted from [url=http://mp.weixin.qq.com/s?__biz=MjM5NDQ0NjM5Mg==&mid=401439742&idx=1&sn=6d2f09eeda89ca7617ecc34e0e6714a8&3rd=MzA3MDU...
白丁 Power technology
M4 Task 3: (Completed) Implement the display interface of three-axis accelerated ADC sampling on LCD
The three-axis acceleration on the MSP-EXP430FR5739 is very powerful! I decided to use it on the M4 board to measure the inclination! I worked hard all night and came up with an interface, which can b...
anananjjj Microcontroller MCU
How to define bit variables?
...
wacrt Microcontroller MCU
Problems with powering the microcontroller
How to draw a 220v AC to 5v DC conversion circuit? Can it be used to power a 51 microcontroller?...
396502099 Embedded System
Can the ne555 plus integrator circuit generate a 50KHz triangular carrier?
Can the ne555 plus integration circuit generate a 50KHz triangular carrier? eeworldpostqq...
xiefei Power technology
Playing with Zynq Serial 22——[ex03] PLL configuration example based on Zynq PL
1 OverviewThis example uses clocks of different frequencies generated by PLL to drive three LED indicators to flash at the same frequency. The focus of this example is not the LED , but the applicatio...
ove学习使我快乐 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2481  824  1630  1102  686  50  17  33  23  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号