BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDX54, BDX54A, BDX54B and BDX54C
60 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 3 A
B
C
E
q
q
q
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDX53
Collector-base voltage (I
E
= 0)
BDX53A
BDX53B
BDX53C
BDX53
Collector-emitter voltage (I
B
= 0)
BDX53A
BDX53B
BDX53C
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
45
60
80
100
5
8
0.2
60
2
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
°C
°C
°C
V
V
UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDX53
V
(BR)CEO
I
C
= 100 mA
I
B
= 0
(see Note 3)
BDX53A
BDX53B
BDX53C
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CB
= 45 V
I
CBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
EBO
h
FE
V
BE(sat)
V
CE(sat)
V
EC
V
EB
=
V
CE
=
I
B
=
I
B
=
I
E
=
5V
3V
12 mA
12 mA
3A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 3 A
I
C
= 3 A
I
C
= 3 A
I
B
= 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
2.5
2
2.5
V
V
V
BDX53
BDX53A
BDX53B
BDX53C
BDX53
BDX53A
BDX53B
BDX53C
MIN
45
60
80
100
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.08
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 3 A
V
BE(off)
= -4.5 V
I
B(on)
= 12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= -12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
40000
TCS120AG
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
2·5
TCS120AH
h
FE
- Typical DC Current Gain
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
10000
2·0
1·5
1000
1·0
0·5
V
CE
= 3 V
t
p
= 300 µs, duty cycle < 2%
100
0·5
1·0
I
C
- Collector Current - A
10
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
1·0
I
C
- Collector Current - A
10
0
0·5
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
3·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
TCS120AI
2·5
2·0
1·5
1·0
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
0·5
0·5
1·0
I
C
- Collector Current - A
10
Figure 3.
PRODUCT
INFORMATION
3
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS120AD
DC Operation
t
p
= 300 µs,
d = 0.1 = 10%
I
C
- Collector Current - A
10
1·0
BDX53
BDX53A
BDX53B
BDX53C
0·1
1·0
10
100
1000
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS120AB
Figure 5.
PRODUCT
INFORMATION
4
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,90
14,55
1,32
1,23
see Note B
see Note C
6,1
3,5
0,97
0,61
1
2
3
1,70
1,07
14,1
12,7
2,74
2,34
5,28
4,88
2,90
2,40
0,64
0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
PRODUCT
INFORMATION
5
NXP MCU
京公网安备 11010802033920号
EEWORLD
