MMDP-67206HV-15-E datasheet, PDF

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MMDP-67206HV-15-E: DescriptionRad. Tolerant High Speed 16 Kb x 9 Parallel FIFO; Categorystorage storage; File Size2MB，20 Pages; ManufacturerAtmel (Microchip)

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MMDP-67206HV-15-E Overview

Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO

MMDP-67206HV-15-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DFP
package instruction	DFP,
Contacts	28
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	25 ns
period time	15 ns
JESD-30 code	R-XDFP-F28
memory density	147456 bi
memory width	9
Humidity sensitivity level	1
Number of functions	1
Number of terminals	28
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX9
Exportable	NO
Package body material	UNSPECIFIED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum seat height	3.3 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	10.16 mm
Base Number Matches	1

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Features

•

First-in First-out Dual Port Memory

16384 bits x 9 Organization

Fast Flag and Access Times: 15, 30 ns

Wide Temperature Range: - 55°C to + 125°C

Fully Expandable by Word Width or Depth

Asynchronous Read/Write Operations

Empty, Full and Half Flags in Single Device Mode

Retransmit Capability

Bi-directional Applications

Battery Back-up Operation: 2V Data Retention

TTL Compatible

Single 5V ± 10% Power Supply

No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm

Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019

Quality grades: QML Q and V with SMD 5962-93177 and ESCC with specification

9301/048

Rad. Tolerant

High Speed

16 Kb x 9

Parallel FIFO

M67206H

Description

The M67206H implements a first-in first-out algorithm, featuring asynchronous

read/write operations. The FULL and EMPTY flags prevent data overflow and under-

flow. The Expansion logic allows unlimited expansion in word size and depth with no

timing penalties. Twin address pointers automatically generate internal read and write

addresses, and no external address information is required. Address pointers are

automatically incremented with the write pin and read pin. The 9 bits wide data are

used in data communications applications where a parity bit for error checking is nec-

essary. The Retransmit pin resets the Read pointer to zero without affecting the write

pointer. This is very useful for retransmitting data when an error is detected in the

system.

Using an array of eight transistors (8T) memory cell, the M67206H combines an

extremely low standby supply current (typ = 0.1

µA)

with a fast access time at 15 ns

over the full temperature range. All versions offer battery backup data retention capa-

bility with a typical power consumption at less than 2

µW.

The M67206H is processed according to the methods of the latest revision of the MIL

PRF 38535 (Q and V) or ESCC 9000.

Rev. 4143J–AERO–04/07

Write Enable (W)

A write cycle is initiated on the falling edge of this input if the Full Flag (FF) is not set.

Data set-up and hold times must be maintained in the rise time of the leading edge of

the Write Enable (W). Data is stored sequentially in the Ram array, regardless of any

current read operation.

Once half the memory is filled, and during the falling edge of the next write operation,

the Half-Full Flag (HF) will be set to low and remain in this state until the difference

between the write and read pointers is less than or equal to half of the total available

memory in the device. The Half-Full Flag (HF) is then reset by the rising edge of the

read operation.

To prevent data overflow, the Full Flag (FF) will go low, inhibiting further write opera-

tions. On completion of a valid read operation, the Full Flag (FF) will go high after TRFF,

allowing a valid write to begin. When the FIFO stack is full, the internal write pointer is

blocked from W, so that external changes to W will have no effect on the full FIFO stack.

Read Enable (R)

A read cycle is initiated on the falling edge of the Read Enable (R) provided that the

Empty Flag (EF) is not set. The data is accessed on a first-in/first-out basis, not includ-

ing any current write operations. After Read Enable (R) goes high, the Data Outputs (Q0

- Q8) will return to a high impedance state until the next Read operation. When all the

data in the FIFO stack has been read, the Empty Flag (EF) will go low, allowing the

“final” read cycle, but inhibiting further read operations while the data outputs remain in

a high impedance state. Once a valid write operation has been completed, the Empty

Flag (EF) will go high after tWEF and a valid read may then be initiated. When the FIFO

stack is empty, the internal read pointer is blocked from R, so that external changes to R

will have no effect on the empty FIFO stack.

This pin is a dual-purpose input. In the Depth Expansion Mode, this pin is connected to

ground to indicate that it is the first loaded (see Operating Modes). In the Single Device

Mode, this pin acts as the retransmit input. The Single Device Mode is initiated by con-

necting the Expansion In (XI) to ground.

The M67206H can be set to retransmit data when the Retransmit Enable Control (RT)

input is pulsed low. A retransmit operation will set the internal read point to the first loca-

tion and will not affect the write pointer. Read Enable (R) and Write Enable (W) must be

in the high state during retransmit. The retransmit feature is intended for use when a

number of writes are equal to or less than the depth of the FIFO has occurred since the

last RS cycle. The retransmit feature is not compatible with the Depth Expansion Mode

and will affect the Half-Full Flag (HF), in accordance with the relative locations of the

read and write pointers.

First Load/Retransmit

(FL/RT)

Expansion In (XI)

The XI input is a dual-purpose pin. Expansion In (XI) is connected to GND to indicate an

operation in the single device mode. Expansion In (XI) is connected to Expansion Out

(XO) of the previous device in the Depth Expansion or Daisy Chain modes.

The Full Flag (FF) will go low, inhibiting further write operations when the write pointer is

one location less than the read pointer, indicating that the device is full. If the read

pointer is not moved after Reset (RS), the Full Flag (FF) will go low after 16384 writes.

The Empty Flag (EF) will go low, inhibiting further read operations when the read pointer

is equal to the write pointer, indicating that the device is empty.

Full Flag (FF)

Empty Flag (EF)

M67206H

4143J–AERO–04/07

MMDP-67206HV-15-E Related Products

	MMDP-67206HV-15-E	5962-9317707QNC	5962-9317707VTC	5962D9317707VNC	5962D9317707VTC	5962D9317708VTC	MM0-67206HV-15SV	MM067206HV-15-E
Description	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO	Rad. Tolerant High Speed 16 Kb x 9 Parallel FIFO
Parts packaging code	DFP	DFP	DIP	DFP	DIP	DIP	DIE	DIE
package instruction	DFP,	DFP, FL28,.4	DIP, DIP28,.3	DFP, FL28,.4	DIP, DIP28,.3	DIP, DIP28,.3	DIE,	DIE,
Reach Compliance Code	compli	compliant	compliant	compli	compliant	compli	unknow	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	25 ns	40 ns	40 ns	40 ns	40 ns	25 ns	25 ns	25 ns
period time	15 ns	30 ns	30 ns	30 ns	30 ns	15 ns	15 ns	15 ns
JESD-30 code	R-XDFP-F28	R-XDFP-F28	R-XDIP-T28	R-XDFP-F28	R-XDIP-T28	R-XDIP-T28	X-XUUC-N	X-XUUC-N
memory density	147456 bi	147456 bit	147456 bit	147456 bi	147456 bit	147456 bi	147456 bi	147456 bi
memory width	9	9	9	9	9	9	9	9
Number of functions	1	1	1	1	1	1	1	1
word count	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	16KX9	16KX9	16KX9	16KX9	16KX9	16KX9	16KX9	16KX9
Exportable	NO	NO	NO	NO	NO	NO	NO	NO
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DFP	DFP	DIP	DFP	DIP	DIP	DIE	DIE
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	UNSPECIFIED
Package form	FLATPACK	FLATPACK	IN-LINE	FLATPACK	IN-LINE	IN-LINE	UNCASED CHIP	UNCASED CHIP
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Qualified	Qualified	Qualified	Qualified	Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	YES	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	THROUGH-HOLE	FLAT	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	UPPER	UPPER
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-	incompatible
Contacts	28	28	28	28	28	28	-	-
Number of terminals	28	28	28	28	28	28	-	-
Maximum seat height	3.3 mm	3.3 mm	3.94 mm	3.3 mm	3.94 mm	3.94 mm	-	-
Terminal pitch	1.27 mm	1.27 mm	2.54 mm	1.27 mm	2.54 mm	2.54 mm	-	-
width	10.16 mm	10.16 mm	7.62 mm	10.16 mm	7.62 mm	7.62 mm	-	-
Base Number Matches	1	1	1	-	1	1	1	-
Maker	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Other features	-	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	RETRANSMIT	-	-
Maximum clock frequency (fCLK)	-	25 MHz	25 MHz	25 MHz	25 MHz	40 MHz	-	-
JESD-609 code	-	e4	e4	e4	e4	e4	-	-
Memory IC Type	-	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	OTHER FIFO	-	-
Encapsulate equivalent code	-	FL28,.4	DIP28,.3	FL28,.4	DIP28,.3	DIP28,.3	-	-
power supply	-	5 V	5 V	5 V	5 V	5 V	-	-
Filter level	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	-	-
Maximum slew rate	-	0.11 mA	0.11 mA	0.11 mA	0.11 mA	0.12 mA	-	-
Terminal surface	-	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	-	-

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