MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
April 2013
MOCD217M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers (Low Input Current)
Features
■
UL Recognized (File #E90700, Volume 2)
■
VDE Recognized (File #136616) (add option “V” for
■
■
■
■
■
Description
The MOCD217M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono-
lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
VDE approval, i.e, MOCD217VM)
Low Input Current (specified @ 1mA)
Minimum BV
CEO
of 30 Volts Guaranteed
Convenient Plastic SOIC-8 Surface Mountable
Package Style
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
Applications
■
Interfacing and Coupling Systems of Different
Potentials and Impedances
■
General Purpose Switching Circuits
■
Monitor and Detection Circuits
Schematic
Package Outline
ANODE 1 1
8 COLLECTOR 1
CATHODE 1 2
7 EMITTER 1
Figure 2. Package Outline
ANODE 2 3
6 COLLECTOR 2
CATHODE 2 4
5 EMITTER 2
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
Rating
Forward Current – Continuous
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
Value
60
1.0
6.0
90
0.8
30
7.0
150
150
1.76
2500
250
2.94
-40 to +100
-40 to +150
Unit
mA
A
V
mW
mW/°C
V
V
mA
mW
mW/°C
Vac(rms)
mW
mW/°C
°C
°C
I
F
I
F
(pk)
V
R
P
D
Detector
V
CEO
V
ECO
I
C
P
D
Total Device
V
ISO
P
D
T
A
T
stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Notes:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
2
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
Parameter
Input Forward Voltage
Reverse Leakage Current
Capacitance
Test Conditions
I
F
= 10 mA
V
R
= 6.0 V
Min.
Typ.* Max.
1.05
0.1
18
1.3
100
Unit
V
µA
pF
V
F
I
R
C
Detector
I
CEO1
I
CEO2
BV
CEO
BV
ECO
C
CE
Coupled
Collector-Emitter Dark Current
V
CE
= 10 V, T
A
= 25°C
V
CE
= 10 V, T
A
= 100°C
I
C
= 100 µA
I
E
= 100 µA
f = 1.0 MHz, V
CE
= 0 V
I
F
= 1.0 mA, V
CE
= 5 V
I
C
= 2.0 mA, I
F
= 10 mA
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
(Fig. 8)
f = 60 Hz, t = 1 minute
V
I-O
= 500 V
V
I-O
= 0 V, f = 1 MHz
1.0
1.0
30
7.0
90
7.8
7.0
100
130
0.35
7.5
5.7
3.2
4.7
2500
10
11
0.2
50
nA
µA
V
V
pF
%
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Capacitance
Current Transfer Ratio
(4)
Voltage
CTR
V
CE (sat)
Collector-Emitter Saturation
t
on
t
off
t
r
t
f
V
ISO
R
ISO
C
ISO
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Isolation Surge Voltage
(1)(2)(3)
Isolation Resistance
(2)
Isolation Capacitance
(2)
0.4
V
µs
µs
µs
µs
Vac(rms)
Ω
pF
*Typical values at T
A
= 25°C
Notes:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
3
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
Typical Performance Curves
1.8
10
1.7
V
F
– FORWARD VOLTAGE (V)
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.5
1
V
CE
= 5V
NORMALIZED TO I
F
= 10 mA
1.4
T
A
= -55°C
1.3
T
A
= 25°C
1.2
0.1
1.1
T
A
= 100°C
1.0
1
10
100
I
F
- LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage vs. Forward Current
0.01
0.1
1
10
100
I
F
- LED INPUT CURRENT (mA)
10
Figure 4. Output Curent vs. Input Current
1.6
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
1.4
1.2
1.0
1
0.8
0.6
0.4
0.2
I
F
= 10 mA
NORMALIZED TO V
CE
= 5 V
0.0
0
1
2
3
4
5
6
7
8
9
10
NORMALIZED TO T
A
= 25
o
C
0.1
-80
-60
-40
-20
0
20
40
60
o
80
100
120
T
A
– AMBIENT TEMPERATURE ( C)
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
Figure 5. Output Current vs. Ambient Temperature
10000
Figure 6. Output Current vs. Collector - Emitter Voltage
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
1000
V
CE
= 10 V
100
10
1
0.1
0
20
40
60
o
80
100
T
A
– AMBIENT TEMPERATURE ( C)
Figure 7. Dark Current vs. Ambient Temperature
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
4
MOCD217M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers (Low Input Current)
TEST CIRCUIT
V
CC
= 10 V
WAVEFORMS
INPUT PULSE
I
F
INPUT
I
C
R
L
10%
90%
t
r
Adjust I
F
to produce I
C
= 2 mA
OUTPUT
OUTPUT PULSE
t
f
t
off
t
on
Figure 8. Switching Time Test Circuit and Waveform
©2005 Fairchild Semiconductor Corporation
MOCD217M Rev. 1.0.5
www.fairchildsemi.com
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