®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 2.0
Description
Initial Issue
Revised V
IL
= 0.6V => 0.8V
Revised Package Outline Dimension(TSOP-II)
Added LL Spec.
Revised Test Condition of I
SB1
/I
DR
Added -12ns Spec.
Revised I
CC
and I
SB1
Added I grade
Revised
ABSOLUTE MAXIMUN RATINGS
Revised Test Condition of I
CC
Revised
FEATURES
&
ORDERING INFORMATION Lead free
and green package available
to
Green package available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Added package type TFBGA
Revised
ORDERING INFORMATION
in page 12
Revised -12ns spec as -10ns spec and related parameter
Revised
ORDERING INFORMATION
in page 11
Issue Date
Mar.23.2006
Jun.9.2006
Apr.12.2007
Jun.25.2007
Rev. 2.1
Apr.17.2009
Rev. 2.2
Rev. 2.3
Rev. 2.4
May.6.2010
Aug.30.2010
July.03.2013
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY6125616 is a 4,194,304-bit low power CMOS
static random access memory organized as 262,144
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6125616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6125616 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 10/15/20/25ns
Low power consumption:
Operating current : 215/140/110/100mA(MAX.)
Standby current :
15mA(MAX. for 10ns)
3mA(MAX. for 15/20/25ns)
100µA( (MAX. for 15/20/25ns LL version)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY6125616
LY6125616(I)
LY6125616
LY6125616(E)
LY6125616(I)
LY6125616(LL)
LY6125616(LLI)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-40 ~ 85℃
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
10ns
10ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(I
SB1
)
Operating(Icc)
15mA(MAX.)
215mA(MAX.)
15mA(MAX.)
215mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
SYMBOL
Vcc
Vss
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
A0 - A17
CE#
DQ0 – DQ15 Data Inputs/Outputs
DECODER
256Kx16
MEMORY ARRAY
A0-A17
WE#
OE#
LB#
UB#
V
CC
V
SS
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
NC
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 A17
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
2
3
4
TFBGA
5
6
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
Output Low Voltage
V
OL
I
OL
= 8mA
10
Cycle time = Min.
15
Average Operating
I
CC
CE# = V
IL
, I
I/O
= 0mA
Power supply Current
20
Others at V
IL
or V
IH
25
10
Standby Power
CE#
≧
V
CC
- 0.2V
15/20/25
I
SB1
Supply Current
Others at 0.2V / V
CC
-0.2V
15/20/25LL
MIN.
4.5
2.2
- 0.3
-1
-1
2.4
-
-
-
-
-
-
-
-
TYP.
5.0
-
-
-
-
-
-
-
100
80
75
-
0.1
20
*4
MAX.
5.5
V
CC
+0.3
0.8
1
1
-
0.4
215
140
110
100
15
5
3*
6
100*
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
mA
mA
mA
µA
Notes:
1. V
IH
(max) = V
CC
+ 2.0V for pulse width less than 6ns.
2. V
IL
(min) = V
SS
- 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized on engineering evaluation stage, not for mass production test.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
6. 50µA for special request
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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