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MP3502W

Description
35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size89KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Compare View All

MP3502W Overview

35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
MP35005(W) - - - MP3510(W)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 35.0 A
SILICON BRIDGE RECTIFIERS
MP - W
.311
(7.9)
MAX
Rating to 1000V PRV
Surge overload rating to
400
Am peres peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
+
.732(18.6)
.693(17.6)
-
1.142(29)
1.102(28)
PLASTIC
.043(1.1)
.039(1.0)
.787
20
MIN
HOLE FOR
NO.10 SCREW
1.142(29)
1.102(28)
.469(11.9)
.429(10.9)
.732(18.6)
.693(17.6)
inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MP
35005
(W)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
MP
3501
(W)
100
70
100
MP
3502
(W)
200
140
200
MP
3504
(W)
400
280
400
35.0
MP
3506
(W)
600
420
600
MP
3508
(W)
800
560
800
MP
3510
(W)
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 17.50 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
400.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287061
BL
GALAXY ELECTRICAL
1.

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