DISCRETE SEMICONDUCTORS
DATA SHEET
BF410A to D
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1990
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in a plastic TO-92 variant;
intended for applications up to the
VHF range.
These FETs can be supplied in four
I
DSS
groups. Special features are the
low feedback capacitance and the low
noise figure. Thanks to these special
features the BF410 is very suitable for
applications such as the RF stages in
FM portables (type A), car radios
(type B) and mains radios (type C) or
the mixer stage (type D).
PINNING - TO-92 VARIANT
1 = drain
2 = source
3 = gate
BF410A to D
handbook, halfpage
2
1
3
g
MAM257
d
s
Fig.1 Simplified outline and symbol
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to T
amb
= 75
°C
Drain current
V
DS
= 10 V; V
GS
= 0
Transfer admittance
V
DS
= 10 V; V
GS
= 0; f = 1 kHz
Feedback capacitance
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
Noise figure at optimum source admittance
G
S
= 1 mS;
−B
S
= 3 mS; f = 100 MHz
V
DS
= 10 V; V
GS
= 0
V
DS
= 10 V; I
D
= 5 mA
F
F
typ.
typ.
1.5
−
1.5
−
−
1.5
−
dB
1.5 dB
C
rs
C
rs
typ.
typ.
0.5
−
0.5
−
−
0.5
−
pF
0.5 pF
y
fs
min.
2.5
4
6
7 mS
I
DSS
min.
max.
0.7
3.0
2.5
7.0
6
12
10 mA
18 mA
P
tot
max.
BF410A
B
300
C
D
mW
V
DS
I
D
max.
max.
20
30
V
mA
December 1990
2
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
amb
= 75
°C
Storage temperature range
Junction temperature
THERMAL RESISTANCE
From junction to ambient in free air
STATIC CHARACTERISTICS
T
amb
= 25
°C
Gate cut-off current
−V
GS
= 0.2 V; V
DS
= 0
Gate-drain breakdown voltage
I
S
= 0;
−I
D
= 10
µA
Drain current
V
DS
= 10 V; V
GS
= 0
Gate-source cut-off voltage
I
D
= 10
µA;
V
DS
= 10 V
−V
(P)GS
typ.
0.8
I
DSS
min.
max.
0.7
3.0
−V
(BR)GDO
min.
20
−I
GSS
max.
BF410A
10
B
R
th j-a
V
DS
V
DGO
I
D
±
I
G
P
tot
T
stg
T
j
BF410A to D
max.
max.
max.
max.
max.
max.
20 V
20 V
30 mA
10 mA
300 mW
150
°C
−65
to
+150 °C
=
250 K/W
C
10
20
6
12
2.2
D
10
20
nA
V
10
20
2.5
7.0
1.5
10 mA
18 mA
3 V
December 1990
3
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
Feedback capacitance at f = 1 MHz
Transfer admittance at f = 1 kHz
V
GS
= 0 instead of I
D
= 5 mA
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
Noise figure
at optimum source admittance
G
S
= 1 mS;
−B
S
= 3 mS; f = 100 MHz
F
typ.
1.5
1.5
1.5
C
is
g
is
C
rs
y
fs
y
fs
y
fs
C
os
g
os
g
os
max.
typ.
typ.
max.
min.
min.
typ.
max.
max.
typ.
BF410A to D
V
DS
= 10 V; V
GS
= 0; T
amb
= 25
°C
for BF410A and B
V
DS
= 10 V; I
D
= 5 mA; T
amb
= 25
°C
for BF410C and D
BF410A
5
100
0.5
0.7
2.5
−
3.5
3
60
35
B
5
90
0.5
0.7
4.0
−
5.5
3
80
55
C
5
60
0.5
0.7
4.0
6.0
5.0
3
100
70
D
5 pF
50
µS
0.5 pF
0.7 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
120
µS
90
µS
1.5 dB
handbook, halfpage
1.5
MDA277
Crs
(pF)
1
10
handbook, halfpage
|y
fs
|
(mA/V)
8
BF410C
MDA278
BF410D
BF410B
6
BF410A
4
0.5
typ
2
0
0
4
8
12
16
20
VDS (V)
0
0
5
10
ID (mA)
15
Fig.2
V
GS
= 0 for BF410A and BF410B;
I
D
= 5 mA for BF410C and BF410D;
f = 1 MHz; T
amb
= 25
°C.
Fig.3 V
DS
10 V; f = 1 kHz; T
amb
= 25
°C;
typical values.
December 1990
4
Philips Semiconductors
Product specification
N-channel silicon field-effect transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle)
BF410A to D
SOT54 variant
c
L2
E
d
A
L
b
1
2
D
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.56
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L1
(1)
max
2.5
L2
max
2.5
Notes
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 variant
REFERENCES
IEC
JEDEC
TO-92
EIAJ
SC-43
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
December 1990
5
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