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BF410C

Description
N-channel silicon field-effect transistors
CategoryDiscrete semiconductor    The transistor   
File Size38KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BF410C Overview

N-channel silicon field-effect transistors

BF410C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
FET technologyJUNCTION
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
BF410A to D
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
December 1990

BF410C Related Products

BF410C BF410A BF410B BF410D
Description N-channel silicon field-effect transistors N-channel silicon field-effect transistors N-channel silicon field-effect transistors N-channel silicon field-effect transistors
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow
FET technology JUNCTION JUNCTION JUNCTION JUNCTION
JESD-609 code e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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