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SS9015

Description
PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)
CategoryDiscrete semiconductor    The transistor   
File Size232KB,6 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

SS9015 Overview

PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)

SS9015 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.45 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)190 MHz
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