SS110 datasheet, PDF - EEWORLD Datasheet

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SS110: Description1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size349KB，2 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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SS110 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

SS110 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, SMA, 2 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	100 V
Maximum average forward current	1 A

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MCC

Features

•

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

SS12

THRU

SS110

1 Amp Schottky

Rectifier

20 to 100 Volts

DO-214AC

(SMAJ) (High Profile)

H

Cathode Band

Schottky Barrier Rectifier

Guard Ring Protection

Low Forward Voltage

Reverse Energy Tested

High Current Capability

Extremely Low Thermal Resistance

•

Maximum Ratings

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 35

°C/W

Junction To Lead

MCC

Catalog

Number

SS12

SS13

SS14

SS15

SS16

SS18

SS110

Device

Marking

SS12

SS13

SS14

SS15

SS16

SS18

SS110

Maximum

Recurrent

Peak Reverse

Voltage

20V

30V

40V

50V

60V

80V

100V

I

F(AV)

I

FSM

1.0A

30A

Maximum

RMS

Voltage

14V

21V

28V

35V

42V

56V

70V

Maximum

DC

Blocking

Voltage

20V

30V

40V

50V

60V

80V

100V

J

A

C

E

F

G

D

B

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

SS12

SS13

SS14

SS15-16

SS18-110

T

J

= 100°C

8.3ms, half sine

DIM

A

B

C

D

E

F

G

H

J

INCHES

MIN

.078

.067

.002

---

.035

.065

.205

.160

.100

MAX

.116

.089

.008

.02

.055

.096

.224

.180

.112

DIMENSIONS

MM

MIN

1.98

1.70

.05

---

.89

1.65

5.21

4.06

2.57

V

F

.45V

.55V

.60V

.70V

.85V

I

FM

= 1.0A;

T

J

= 25°C*

MAX

2.95

2.25

.20

.51

1.40

2.45

5.69

4.57

2.84

NOTE

SUGGESTED SOLDER

PAD LAYOUT

0.090”

Typical Junction

Capacitance

110pF

SS12 - SS16

C

J

20pF

SS18-SS110

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I

R

0.5mA

20mA

T

A

= 25°C

T

A

= 100°C

0.085”

Measured at

1.0MHz, V

R

=4.0V

0.070”

www.mccsemi.com

SS110 Related Products

	SS110	SS16	SS18	SS15	SS14	SS13	SS12
Description	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC	SIGNAL DIODE	SIGNAL DIODE	1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
state	ACTIVE	ACTIVE	-	CONSULT MFR	ACTIVE	ACTIVE	ACTIVE
Diode type	Signal diode	Signal diode	-	Signal diode	Signal diode	Signal diode	Signal diode

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