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SS18

Description
1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size349KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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SS18 Overview

1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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SS12
THRU
SS110
1 Amp Schottky
Rectifier
20 to 100 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 35
°C/W
Junction To Lead
MCC
Catalog
Number
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Device
Marking
SS12
SS13
SS14
SS15
SS16
SS18
SS110
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
I
F(AV)
I
FSM
1.0A
30A
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
J
A
C
E
F
G
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SS12
SS13
SS14
SS15-16
SS18-110
T
J
= 100°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
DIMENSIONS
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
V
F
.45V
.55V
.60V
.70V
.85V
I
FM
= 1.0A;
T
J
= 25°C*
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
Typical Junction
Capacitance
110pF
SS12 - SS16
C
J
20pF
SS18-SS110
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
0.5mA
20mA
T
A
= 25°C
T
A
= 100°C
0.085”
Measured at
1.0MHz, V
R
=4.0V
0.070”
www.mccsemi.com

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SS18 SS16 SS15 SS14 SS13 SS12 SS110
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