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MTZJ3.0B

Description
3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
Categorysemiconductor    Discrete semiconductor   
File Size146KB,2 Pages
ManufacturerETC1
Download Datasheet View All

MTZJ3.0B Overview

3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34

SIYU
R
DO-35 Glass
max. 0.52
MTZJ_B Series
特征 Features
·反向漏电流小。
Low reverse leakage
·½纳击穿阻抗½。
low zener impedance
min.
27.5
·最大功率耗散500mW。
maximum power dissipation of 500 mW
·高稳定性和可靠性。
High stability and high reliability
1.8 0.2
3.8 0.2
CATHODE
MARK
机械数据
Mechanical Data
封装: DO-35 玻璃封装
Case: DO-35 Glass Case
极性: 色环端为负极
Polarity: Color band denotes cathode end
安装½½: 任意
Mounting Position: Any
min.
27.5
Unit:mm
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
参数
Parameter
Power Dissipation
Operating junction temperature
Storage temperature range
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
Pd
T
j
Ts
数值
Value
500
175
单½
Unit
mW
功率消耗
工½结温
存储温度
-50 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
稳压范围
Zener Voltage
反向特性
测试条件
Test condition
Reverese Current
动态电阻
Dynamic Resistance
型号
Type
V
Z
(V)
最小值
MIN.
最大值
MAX.
I
R
(µA)
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
最大值
MAX.
120
100
120
100
20
10
5
5
5
5
测试条件
Test condition
rd(Ω)
最大值
MAX.
100
100
100
100
100
100
100
100
100
80
测试条件
Test condition
V
R
(V)
0.6
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
MTZJ2.0B
MTZJ2.2B
MTZJ2.4B
MTZJ2.7B
MTZJ3.0B
MTZJ3.3B
MTZJ3.6B
MTZJ3.9B
MTZJ4.3B
MTZJ4.7B
2.020
2.220
2.430
2.690
3.010
3.320
3.600
3.89
4.17
4.55
2.200
2.410
2.630
2.910
3.220
3.530
3.845
4.16
4.43
4.80
大昌电子
DACHANG ELECTRONICS
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