EEWORLDEEWORLDEEWORLD

Part Number

Search

MURS140_12

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size89KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

MURS140_12 Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

MURS140_12 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, SMB, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.0750 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current35 A
MURS140, MURS160
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB
(DO-214AA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Circuit configurations
1.0 A
400 V, 600 V
35 A
50 ns
1.05 V
175 °C
DO-214AA (SMB)
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
T
L
= 150 °C
T
L
= 125 °C
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
MURS140
MG
400
400
400
1.0
2.0
35
-65 to +175
°C
A
MURS160
MJ
600
600
600
V
UNIT
Revision: 20-Feb-15
Document Number: 88688
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

MURS140_12 Related Products

MURS140_12 MURS140HE3/52T
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA DIODE GEN PURP 400V 1A DO214AA
Number of terminals 2 2
Number of components 1 1
surface mount Yes YES
Terminal form C BEND C BEND
Terminal location DUAL DUAL
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
application EFFICIENCY EFFICIENCY
Phase 1 1
Maximum reverse recovery time 0.0750 us 0.075 µs
Maximum repetitive peak reverse voltage 600 V 400 V
Maximum non-repetitive peak forward current 35 A 35 A
A multifunctional AC voltage-stabilized power supply controlled by a single-chip microcomputer
A multifunctional AC voltage-stabilized power supply controlled by a single-chip microcomputer Abstract: This paper proposes a multifunctional AC voltage-stabilized power supply controlled by a single...
zbz0529 PCB Design
MSP430G2452 Flash modifies the value at the specified address of the information segment InfoFlash, but cannot do it. Please help
[i=s] This post was last edited by tuyafei on 2014-5-28 18:56 [/i] When testing FlashModifyChar(...), it is not possible to modify the data stored in the corresponding segment address. Please give me ...
tuyafei Microcontroller MCU
uCOS-II internal mechanism
The attached document describes the internal mechanism of uCOS-II very concisely, which is a good resource for learning OS....
wstrom Real-time operating system RTOS
Help: Can I find out the crystal frequency of an external crystal oscillator for a microcontroller?
It is known that the resonant frequency of a quartz crystal is about 5MHz (with a deviation of about tens of Hz). If we want to test its resonant frequency more accurately, can we use it as a crystal ...
zzfu2010 MCU
Are there any recommendations for cost-effective and stable GPS or Beidou chips?
Are there any seniors who are familiar with Beidou chips and GPS chips who can recommend some relatively stable, low-power, and low-voltage Beidou chips and GPS chips?...
ezezy RF/Wirelessly
Give me some ideas, everyone.
A few questions: 1. Is the prospect of embedded system good? How is the salary? 2. Doesn't embedded system engineer have a bottleneck at 35 years old? 3. I am a student, I want to know how much the tr...
cocojy Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1425  223  720  1864  180  29  5  15  38  4 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号