Silicon N Channel MOSFET Tetrode
BF 998
Features
q
Short-channel transistor
with high S/C quality factor
q
For low-noise, gain-controlled
input stages up to 1 GHz
Type
BF 998
Marking
MO
Ordering Code
(tape and reel)
Q62702-F1129
Pin Configuration
1
2
3
4
S
D
G
2
G
1
Package
1)
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation,
T
S
< 76 ˚C
Storage temperature range
Channel temperature
Thermal Resistance
Junction - soldering point
R
th JS
< 370
K/W
Symbol
V
DS
I
D
±
I
G1/2SM
Values
12
30
10
200
150
Unit
V
mA
mW
P
tot
T
stg
T
ch
– 55 … + 150 ˚C
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BF 998
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10
µ
A,
– V
G1S
= –
V
G2S
= 4 V
Gate 1-source breakdown voltage
±
I
G1S
= 10 mA,
V
G2S
=
V
DS
= 0
Gate 2-source breakdown voltage
±
I
G2S
= 10 mA,
V
G1S
=
V
DS
= 0
Gate 1-source leakage current
±
V
G1S
= 5 V,
V
G2S
=
V
DS
= 0
Gate 2-source leakage current
±
V
G2S
= 5 V,
V
G1S
=
V
DS
= 0
Drain current
V
DS
= 8 V,
V
G1S
= 0,
V
G2S
= 4 V
Gate 1-source pinch-off voltage
V
DS
= 8 V,
V
G2S
= 4 V,
I
D
= 20
µ
A
Gate 2-source pinch-off voltage
V
DS
= 8 V,
V
G1S
= 0,
I
D
= 20
µ
A
V
(BR) DS
±
V
(BR) G1SS
±
V
(BR) G2SS
±
I
G1SS
±
I
G2SS
Values
typ.
max.
Unit
12
8
8
–
–
2
–
–
–
–
–
–
–
–
–
–
–
12
12
50
50
18
2.5
2
V
nA
I
DSS
– V
G1S(p)
– V
G2S(p)
mA
V
Semiconductor Group
2
BF 998
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Forward transconductance
V
DS
= 8 V,
I
D
= 10 mA,
V
G2S
= 4 V
f
= 1 kHz
Gate 1 input capacitance
V
DS
= 8 V,
I
D
= 10 mA,
V
G2S
= 4 V
f
= 1 MHz
Gate 2 input capacitance
V
DS
= 8 V,
I
D
= 10 mA,
V
G2S
= 4 V
f
= 1 MHz
Reverse transfer capacitance
V
DS
= 8 V,
I
D
= 10 mA,
V
G2S
= 4 V
f
= 1 MHz
Output capacitance
V
DS
= 8 V,
I
D
= 10 mA,
V
G2S
= 4 V
f
= 1 MHz
Power gain
(test circuit 1)
V
DS
= 8 V,
I
D
= 10 mA,
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS,
V
G2S
= 4 V
Power gain
(test circuit 2)
V
DS
= 8 V,
I
D
= 10 mA,
f
= 800 MHz,
G
G
= 3.3 mS,
G
L
= 1 mS,
V
G2S
= 4 V
Noise figure
(test circuit 1)
V
DS
= 8 V,
I
D
= 10 mA,
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS,
V
G2S
= 4 V
Noise figure
(test circuit 2)
V
DS
= 8 V,
I
D
= 10 mA,
f
= 800 MHz,
G
G
= 3.3 mS,
G
L
= 1 mS,
V
G2S
= 4 V
Control range
(test circuit 2)
V
DS
= 8 V,
V
G2S
= 4 … – 2 V
f
= 800 MHz
g
fs
–
24
–
mS
Values
typ.
max.
Unit
C
g1ss
–
2.1
2.5
pF
C
g2ss
–
1.2
–
C
dg1
–
25
–
fF
C
dss
–
1.05
–
pF
G
ps
–
28
–
dB
G
ps
–
20
–
F
–
0.6
–
dB
F
–
1
–
∆
G
ps
40
–
–
Semiconductor Group
3
BF 998
Total power dissipation
P
tot
=
f
(T
A
)
Output characteristics
I
D
=
f
(V
DS
)
V
G2S
= 4 V
Gate 1 forward transconductance
g
fs1
=
f
(V
G1S
)
V
DS
= 8 V,
I
DSS
= 10 mA,
f
= 1 kHz
Gate 1 forward transconductance
g
fs1
=
f
(V
G2S
)
V
DS
= 8 V,
I
DSS
= 10 mA,
f
= 1 kHz
Semiconductor Group
4
BF 998
Gate 1 forward transconductance
g
fs1
=
f
(I
D
)
V
DS
= 8 V,
I
DSS
= 10 mA,
f
= 1 kHz
Gate 1 input capacitance
C
g1ss
=
f
(V
G1S
)
V
G2S
= 4 V,
V
DS
= 8 V,
I
DSS
= 10 mA,
f
= 1 MHz
Gate 2 input capacitance
C
g2ss
=
f
(V
G2S
)
V
G1S
= 0 V,
V
DS
= 8 V
I
DSS
= 10 mA,
f
= 1 MHz
Output capacitance
C
dss
=
f
(V
DS
)
V
G1S
= 0 V,
V
G2S
= 4 V
I
DSS
= 10 mA,
f
= 1 MHz
Semiconductor Group
5
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