DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135
NPN 7GHz wideband transistor
Product specification
File under discrete semiconductors, SC14
1995 Sep 13
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
age
BFG135
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
up to T
s
= 145
°C
(note 1)
I
C
= 100 mA; V
CE
= 10 V; T
j
= 25
°C
I
C
= 100 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V; f = 500 MHz;
T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V; f = 800 MHz;
T
amb
= 25
°C
V
o
output voltage
open base
CONDITIONS
open emitter
−
−
−
−
80
−
−
−
MIN.
−
−
−
−
130
7
16
12
850
TYP.
MAX.
25
15
150
1
−
−
−
−
−
GHz
dB
dB
mV
UNIT
V
V
mA
W
d
im
=
−60
dB; I
C
= 100 mA; V
CE
= 10 V;
−
R
L
= 75
Ω;
T
amb
= 25
°C;
f
(p+q−r)
= 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 145
°C
(note 1)
open emitter
open base
open collector
CONDITIONS
−
−
−
−
−
−65
−
MIN.
MAX.
25
15
2
150
1
150
175
UNIT
V
V
V
mA
W
°C
°C
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°C
V
o
d
2
output voltage
second order intermodulation
distortion
note 1
note 2
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 450 MHz;
f
p
= 50 MHz; f
q
= 400 MHz
I
C
= 90 mA; V
CE
= 10 V;
V
O
= 50 dBmV; T
amb
= 25
°C;
f
(p+q)
= 810 MHz;
f
p
= 250 MHz; f
q
= 560 MHz
Notes
1. d
im
=
−60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 445.25 MHz;
V
q
= V
o
−6
dB; f
q
= 453.25 MHz;
V
r
= V
o
−6
dB; f
r
= 455.25 MHz;
measured at f
(p+q−r)
= 443.25 MHz.
2. d
im
=
−60
dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
Ω;
T
amb
= 25
°C;
V
p
= V
o
at d
im
=
−60
dB; f
p
= 795.25 MHz;
V
q
= V
o
−6
dB; f
q
= 803.25 MHz;
V
r
= V
o
−6
dB; f
r
= 805.25 MHz;
measured at f
(p+q−r)
= 793.25 MHz.
MIN.
−
80
−
−
−
−
−
−
−
−
−
TYP.
−
130
2
7
1.2
7
16
12
900
850
−58
PARAMETER
thermal resistance from junction to soldering
point
CONDITIONS
up to T
s
= 145
°C
(note 1)
BFG135
THERMAL
RESISTANCE
30 K/W
MAX.
1
−
−
−
−
−
−
−
−
−
−
UNIT
µA
pF
pF
pF
GHz
dB
dB
mV
mV
dB
−
−53
−
dB
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
handbook, full pagewidth
,,
,
L6
C4
C5
VBB
L5
C3
L3
C6
R1
R2
input
75
Ω
C1
L1
L2
L4
DUT
C7
C2
R3
R4
MBB284
VCC
output
75
Ω
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
C1, C3, C5, C6
C2, C7
C4 (note 1)
L1
L2
L3 (note 1)
L4
L5
L6 (note 1)
R1
R2 (note 1)
R3, R4
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε
r
= 2.2); thickness
1
⁄
1
16
inch; thickness of copper sheet
⁄
32
inch.
DESCRIPTION
multilayer ceramic capacitor
multilayer ceramic capacitor
miniature ceramic plate capacitor
microstripline
microstripline
1.5 turns 0.4 mm copper wire
microstripline
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
75
5
≈25
10
200
27
Ω
µH
nH
kΩ
Ω
Ω
length 30 mm
2322 180 73103
2322 180 73201
2322 180 73279
VALUE
10
1
10
75
75
UNIT
nF
pF
nF
Ω
Ω
length 7 mm;
width 2.5 mm
length 22mm;
width 2.5 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
3122 108 20153
DIMENSIONS
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
1995 Sep 13
4
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
handbook, full pagewidth
VBB
C3
VCC
C5
R1
R3
L3
L5
75
Ω
input
C1
L1
C2
R2
R4
L6
C4
L2
C6
L4
C7
75
Ω
output
MBB299
andbook, full pagewidth
80 mm
60 mm
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
1995 Sep 13
5
京公网安备 11010802033920号
EEWORLD
