·
·
·
·
·
·
·
PRELIMINARY
Fast Recovery Epitaxial Diode INT-A -PAK
MZK400TS60U
Ultra-Fast
TM
Speed FRED
MZK
MZC400TS60U
Features
International standard package
With DBC ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Ultra-soft recovery behaviour
Industry standard package
UL recongnition pending
MZC
V
RRM
= 600V
I
FAVM
= 400A
t
rr = 250
ns
Benefits
·
·
·
·
·
·
Antiparallel diode for high frequency
switching devices
Increased operating efficiency
Direct mounting to heatsink
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Low voltage peaks for reduced
protection circuits
Absolute Maximum Ratings
Symbol
V
RSM
& V
RRM
I
FRMS
I
FAVM
I
FRM
I
FSM
T
C
=75
o
C
T
C
=75
o
C; rectangular, d=0.5
t
p
<10µs; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
T
VJ
=150
o
C; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
I
2
t
T
VJ
=45
o
C; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
T
VJ
=150
o
C; t=10ms (50 Hz),sine
t=8.3ms (60 Hz),sine
V
ISOL
P
D
T
J
T
STG
RMS Isolation Voltage, Any Terminal To Case, t=1 min
T
C
=25
o
C
Operating Junction Temperature Range
Storage Temperature Range
Test Conditions
Max.
600
560
400
2185
3300
3600
2880
3180
38400
39100
31100
31800
2500
1008
-40 to +150
-40 to +125
Units
V
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
V
W
o
C
MZC400TS60U
MZK400TS60U
Termal / Mechanical Characteristics
Parameter
R
θJS
R
θJC
R
θCS
Termal Resistance, Junction-to- Sink
DC
Termal Resistance, Junction-to- Case DC
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
Typ.
-
-
0.08
-
-
200
Max.
0.202
0.122
-
4.0
3.0
-
Units
o
C/W
N.m
g
Electrical Characteristics (unless otherwise specified)
Parameter
V
RRM
I
R
Reverse Breakdown Voltage
Diode Leaking Current
Min.
600
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
250
-
-
Max.
-
16
5
100
1.17
1.36
1.41
1.52
0.85
1.14
300
66
110
Units
V
mA
mA
mA
V
V
V
V
V
mΩ
ns
A
A
Conditions
I
R
=16mA
T
VJ
=25
o
C V
R
=V
RRM
T
VJ
=25
o
C V
R
=0.8V
RRM
T
VJ
=125
o
C V
R
=0.8V
RRM
I
F
=230A; T
VJ
=125
o
C
T
VJ
= 25
o
C
I
F
=400A; T
VJ
=125
o
C
T
VJ
= 25
o
C
V
F
Diode Forward Voltage
-
-
-
-
V
TO
For power-loss calculations only
-
-
r
6
trr@T
VJ
=100
o
C
Diode Reverse Recovery Time
I
RM
@T
VJ
= 25
o
C Diode Peak Reverse Current
I
RM
@T
VJ
=100
o
C Diode Peak Reverse Current
-
-
-
IF=400A
VR=300V
-di/dt=600A/µs
Case Outline - Int-a-pak
Dimensions are shown in millimeters
2
京公网安备 11010802033920号
EEWORLD
