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BFN19

Description
PNP Silicon High-Voltage Transistors
CategoryDiscrete semiconductor    The transistor   
File Size47KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFN19 Overview

PNP Silicon High-Voltage Transistors

BFN19 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-89
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BFN17, BFN19
PNP Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN16, BFN18 (NPN)
1
2
3




2
VPS05162
Type
BFN17
BFN19
Maximum Ratings
Parameter
Marking
DG
DH
1=B
1=B
Pin Configuration
2=C
2=C
3=E
3=E
Package
SOT89
SOT89
Symbol
V
CEO
V
CBO
V
EBO
BFN17
250
250
5
BFN19
300
300
5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 130 °C
Junction temperature
Storage temperature
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
200
500
100
200
1
150
-65 ... 150
mA
W
°C
Thermal Resistance
Junction - soldering point
1)
R
thJS

20
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-30-2001

BFN19 Related Products

BFN19 BFN17
Description PNP Silicon High-Voltage Transistors PNP Silicon High-Voltage Transistors
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
Parts packaging code SOT-89 SOT-89
package instruction SMALL OUTLINE, R-PSSO-F3 SOT-89, 3 PIN
Contacts 3 3
Reach Compliance Code compli unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 300 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 40
JEDEC-95 code TO-243 TO-243
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
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