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BFN38

Description
NPN Silicon High-Voltage Transistors
CategoryDiscrete semiconductor    The transistor   
File Size45KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BFN38 Overview

NPN Silicon High-Voltage Transistors

BFN38 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
BFN36, BFN38
NPN Silicon High-Voltage Transistors
Suitabled for video output stages in TV sets and
switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN37, BFN39 (PNP)
Type
BFN36
BFN38
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 124 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS




4
3
2
1
VPS05163
Marking
BFN 36
BFN 38
1=B
1=B
Pin Configuration
2=C
2=C
3=E
3=E
4=C
4=C
Package
SOT223
SOT223
Symbol
V
CEO
V
CBO
V
EBO
BFN36
250
250
5
BFN38
300
300
5
Unit
V
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
200
500
100
200
1.5
150
-65 ... 150
mA
W
°C

17
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-30-2001

BFN38 Related Products

BFN38 BFN36
Description NPN Silicon High-Voltage Transistors NPN Silicon High-Voltage Transistors
Is it Rohs certified? conform to incompatible
Maker Infineon Infineon
Parts packaging code SOT-223 SOT-223
package instruction SMALL OUTLINE, R-PDSO-G4 SOT-223, 4 PIN
Contacts 4 4
Reach Compliance Code compli unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 300 V 250 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 40
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 70 MHz 70 MHz
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