BFQ19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
1
2
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
VPS05162
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFQ19S
Maximum Ratings
Parameter
Marking
FG
1=B
Pin Configuration
2=C
3=E
Package
SOT89
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
15
20
20
3
75
10
1
150
-65 ... 150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
85 °C
1)
mA
W
°C
65
K/W
1
Jun-22-2001
BFQ19S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
DC current gain
I
C
= 70 mA,
V
CE
= 8 V
h
FE
40
100
220
-
I
EBO
-
-
10
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
15
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Jun-22-2001
BFQ19S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
-
-
IP
3
-
9.5
4
35
-
-
-
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=Z
Sopt
,
Z
L
=Z
Lopt
,
f
= 1.8 GHz
G
ma
-
-
11.5
7
-
-
F
-
-
2.5
4
-
-
C
eb
-
4.4
-
C
ce
-
0.4
-
C
cb
-
1
1.5
f
T
4
5.5
-
typ.
max.
Unit
GHz
pF
dB
1
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
dBm
3
Jun-22-2001
BFQ19S
Total power dissipation
P
tot
=
f
(T
S
)
1200
mW
1000
900
P
tot
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
2
10
2
K/W
P
totmax
/ P
totDC
-
10
1
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
4
Jun-22-2001
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