IR2181 datasheet, PDF - EEWORLD Datasheet

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IR2181: Description2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size265KB，14 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Related ProductsFound3parts with similar functions to IR2181

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IR2181 Overview

2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14

IR2181 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIP
package instruction	DIP, DIP8,.3
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
high side driver	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.88 mm
Humidity sensitivity level	2
Number of functions	1
Number of terminals	8
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Nominal output peak current	2.3 A
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	225
power supply	15 V
Certification status	Not Qualified
Maximum seat height	5.33 mm
Maximum supply voltage	20 V
Minimum supply voltage	10 V
Nominal supply voltage	15 V
Supply voltage 1-max	620 V
Mains voltage 1-minute	5 V
surface mount	NO
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Disconnect time	0.33 µs
connection time	0.27 µs
width	7.62 mm

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Preliminary Data Sheet No. PD60030 rev.O

IR2213(S) & (PbF)

HIGH AND LOW SIDE DRIVER

Features

•

Floating channel designed for bootstrap operation

•

Fully operational to +1200V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 12 to 20V

Undervoltage lockout for both channels

3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Outputs in phase with inputs

Also available LEAD-FREE (PbF)

Product Summary

OFFSET

+/-

OUT

on/off

(typ.)

Delay Matching

1200V max.

1.7A / 2A

12 - 20V

280 & 225 ns

30 ns

Packages

Description

The IR2213(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels. Proprietary

16-Lead SOIC

HVIC and latch immune CMOS technologies enable

(wide body)

ruggedized monolithic construction. Logic inputs are

14-Lead PDIP

compatible with standard CMOS or LSTTL outputs,

down to 3.3V logic. The output drivers feature a high

pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched

to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power

MOSFET or IGBT in the high side configuration which operates up to 1200 volts.

Typical Connection

HIN

LIN

HIN

LIN

COM

up to 1200V

LOAD

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical

connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

IR2181 Related Products

	IR2181	IR21814	IR21814PBF	IR21814S	IR21814SPBF	IR2181PBF	IR2181S	IR2181SPBF
Description	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDSO14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14	2.3 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Is it Rohs certified?	incompatible	incompatible	conform to	incompatible	conform to	conform to	incompatible	conform to
Parts packaging code	DIP	DIP	DIP	SOIC	SOIC	DIP	SOIC	SOIC
package instruction	DIP, DIP8,.3	DIP, DIP14,.3	LEAD FREE, PLASTIC, MS-001AC, DIP-14	SOP, SOP14,.25	LEAD FREE, MS-012AB, SOIC-14	LEAD FREE, PLASTIC, MS-001AB, DIP-8	SOP, SOP8,.25	LEAD FREE, MS-012AA, SOIC-8
Contacts	8	14	14	14	14	8	8	8
Reach Compliance Code	compli	compli	unknow	compli	unknow	unknow	compli	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
high side driver	YES	YES	YES	YES	YES	YES	YES	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-PDIP-T8	R-PDIP-T14	R-PDIP-T14	R-PDSO-G14	R-PDSO-G14	R-PDIP-T8	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e0	e0	e3	e0	e3	e3	e0	e3
length	9.88 mm	19.305 mm	19.305 mm	8.65 mm	8.65 mm	9.88 mm	4.9 mm	4.9 mm
Humidity sensitivity level	2	3	3	3	1	2	2	2
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	8	14	14	14	14	8	8	8
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Nominal output peak current	2.3 A	2.3 A	2.3 A	2.3 A	2.3 A	2.3 A	2.3 A	2.3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	SOP	SOP	DIP	SOP	SOP
Encapsulate equivalent code	DIP8,.3	DIP14,.3	DIP14,.3	SOP14,.25	SOP14,.25	DIP8,.3	SOP8,.25	SOP8,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	225	250	245	260	250	245	260
power supply	15 V	15 V	15 V	15 V	15 V	15 V	15 V	15 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.33 mm	5.33 mm	5.33 mm	1.75 mm	1.75 mm	5.33 mm	1.75 mm	1.75 mm
Maximum supply voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
Minimum supply voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
Nominal supply voltage	15 V	15 V	15 V	15 V	15 V	15 V	15 V	15 V
Supply voltage 1-max	620 V	620 V	620 V	620 V	620 V	620 V	620 V	620 V
Mains voltage 1-minute	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	YES	YES	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30	30	30	30
Disconnect time	0.33 µs	0.33 µs	0.33 µs	0.33 µs	0.33 µs	0.33 µs	0.33 µs	0.33 µs
connection time	0.27 µs	0.27 µs	0.27 µs	0.27 µs	0.27 µs	0.27 µs	0.27 µs	0.27 µs
width	7.62 mm	7.62 mm	7.62 mm	3.9 mm	3.9 mm	7.62 mm	3.9 mm	3.9 mm
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	-	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）

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