EEWORLDEEWORLDEEWORLD

Part Number

Search

IR2181PBF

Description
2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size265KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IR2181PBF Online Shopping

Suppliers Part Number Price MOQ In stock  
IR2181PBF - - View Buy Now

IR2181PBF Overview

2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14

IR2181PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIP
package instructionLEAD FREE, PLASTIC, MS-001AB, DIP-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeR-PDIP-T8
JESD-609 codee3
length9.88 mm
Humidity sensitivity level2
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Nominal output peak current2.3 A
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)250
power supply15 V
Certification statusNot Qualified
Maximum seat height5.33 mm
Maximum supply voltage20 V
Minimum supply voltage10 V
Nominal supply voltage15 V
Supply voltage 1-max620 V
Mains voltage 1-minute5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
Disconnect time0.33 µs
connection time0.27 µs
width7.62 mm
Base Number Matches1
Preliminary Data Sheet No. PD60030 rev.O
IR2213(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +1200V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE (PbF)
Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Delay Matching
1200V max.
1.7A / 2A
12 - 20V
280 & 225 ns
30 ns
Packages
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
16-Lead SOIC
HVIC and latch immune CMOS technologies enable
(wide body)
ruggedized monolithic construction. Logic inputs are
14-Lead PDIP
compatible with standard CMOS or LSTTL outputs,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
Typical Connection
HO
V
DD
HIN
SD
LIN
V
SS
V
CC
V
DD
HIN
SD
LIN
V
SS
V
CC
COM
LO
V
B
V
S
up to 1200V
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1

IR2181PBF Related Products

IR2181PBF IR2181 IR21814 IR21814PBF IR21814S IR21814SPBF IR2181S IR2181SPBF
Description 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDSO14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDIP14 2.3 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Is it Rohs certified? conform to incompatible incompatible conform to incompatible conform to incompatible conform to
Parts packaging code DIP DIP DIP DIP SOIC SOIC SOIC SOIC
package instruction LEAD FREE, PLASTIC, MS-001AB, DIP-8 DIP, DIP8,.3 DIP, DIP14,.3 LEAD FREE, PLASTIC, MS-001AC, DIP-14 SOP, SOP14,.25 LEAD FREE, MS-012AB, SOIC-14 SOP, SOP8,.25 LEAD FREE, MS-012AA, SOIC-8
Contacts 8 8 14 14 14 14 8 8
Reach Compliance Code unknow compli compli unknow compli unknow compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
high side driver YES YES YES YES YES YES YES YES
Interface integrated circuit type HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code R-PDIP-T8 R-PDIP-T8 R-PDIP-T14 R-PDIP-T14 R-PDSO-G14 R-PDSO-G14 R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e0 e0 e3 e0 e3 e0 e3
length 9.88 mm 9.88 mm 19.305 mm 19.305 mm 8.65 mm 8.65 mm 4.9 mm 4.9 mm
Humidity sensitivity level 2 2 3 3 3 1 2 2
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 8 8 14 14 14 14 8 8
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Nominal output peak current 2.3 A 2.3 A 2.3 A 2.3 A 2.3 A 2.3 A 2.3 A 2.3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP SOP SOP SOP SOP
Encapsulate equivalent code DIP8,.3 DIP8,.3 DIP14,.3 DIP14,.3 SOP14,.25 SOP14,.25 SOP8,.25 SOP8,.25
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 250 225 225 250 245 260 245 260
power supply 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 5.33 mm 5.33 mm 5.33 mm 5.33 mm 1.75 mm 1.75 mm 1.75 mm 1.75 mm
Maximum supply voltage 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Minimum supply voltage 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
Nominal supply voltage 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V
Supply voltage 1-max 620 V 620 V 620 V 620 V 620 V 620 V 620 V 620 V
Mains voltage 1-minute 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30 30 30 30 30 30
Disconnect time 0.33 µs 0.33 µs 0.33 µs 0.33 µs 0.33 µs 0.33 µs 0.33 µs 0.33 µs
connection time 0.27 µs 0.27 µs 0.27 µs 0.27 µs 0.27 µs 0.27 µs 0.27 µs 0.27 µs
width 7.62 mm 7.62 mm 7.62 mm 7.62 mm 3.9 mm 3.9 mm 3.9 mm 3.9 mm
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1929  2655  2873  2017  2772  39  54  58  41  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号