BFR 93AW
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
5 mA to 30 mA
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 93AW R2s
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
50
6
Q62702-F1489
1=B
2=E
3=C
Package
SOT-323
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
mA
mW
T
S
≤
104 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
300
T
j
T
A
T
stg
R
thJS
150
- 65 ... + 150
- 65 ... + 150
≤
155
°C
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFR 93AW
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
12
-
-
-
-
100
-
V
µA
-
100
nA
-
100
µA
-
10
-
50
200
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
I
CES
I
CBO
I
EBO
h
FE
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
DC current gain
I
C
= 30 mA,
V
CE
= 8 V
Semiconductor Group
2
Dec-11-1996
BFR 93AW
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Transition frequency
Values
typ.
max.
Unit
f
T
4.5
6
0.62
0.28
1.7
-
GHz
pF
-
0.9
-
-
dB
-
-
2
3.3
-
-
I
C
= 30 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
C
cb
C
ce
-
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
C
eb
-
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
F
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
Power gain
2)
G
ma
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
-
-
13
7.5
-
-
-
-
15
10
-
-
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=Z
L
= 50
Ω
f
= 900 MHz
f
= 1.8 GHz
2)
G
ma
= |S
21
/S
12
| (k-(k
2
-1)
1/2
)
Semiconductor Group
3
Dec-11-1996
BFR 93AW
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
8.6752
fA
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
20.011
1.5466
26.834
1.95
3.4649
3.1538
33.388
2.5184
0.72744
1.1061
0
3
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
137.63
0.33395
59
7.2326
1.0075
0.70393
0.28319
0
0.34565
0
0
0.75935
-
A
-
Ω
Ω
V
-
deg
-
fF
-
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.93633
2619.3
0.88761
0.70823
0.13193
0.5071
0.17765
1039.5
0.21422
0.75
1.11
300
-
fA
-
fA
Ω
-
V
fF
-
V
eV
K
0.015129 A
0.043806 mA
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
LBO =
LEI =
LEO =
LCI =
LCO =
CBE =
CCB =
CCE =
0.57
0.4
0.43
0.5
0
0.41
61
101
175
nH
nH
nH
nH
nH
nH
fF
fF
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
BFR 93AW
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
400
mW
P
tot
300
250
T
S
200
150
T
A
100
50
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
R
thJS
10
2
P
totmax
/P
totDC
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
Semiconductor Group
5
Dec-11-1996
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