BFY182
HiRel
NPN Silicon RF Transistor
•
•
•
•
•
HiRel
Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector
currents from 1 mA to 20 mA.
Hermetically sealed microwave package
f
T
= 8 GHz
F = 2.4 dB at 2 GHz
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 04
4
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
BFY182 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
C
E
B
E
Package
Micro-X1
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1608
on request
on request
Q62702F1714
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 1999
BFY182
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, V
BE
=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
2), 3.)
T
S
≤
136°C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
3.)
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
R
th JS
Values
12
20
20
2
35
4
1)
250
200
-65...+200
-65...+200
Unit
V
V
V
V
mA
mA
mW
°C
°C
°C
K/W
< 255
Notes.:
1) The maximum permissible base current for V
FBE
measurements is 20mA (spot-
measurement duration < 1s)
2) At T
S
= + 136 °C. For T
S
> + 136 °C derating is required.
3) T
S
is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
V
CB
= 20 V, I
E
= 0
Collector-emitter cutoff current
V
CE
= 12 V, I
B
= 0.2µA
V
CB
= 10 V, I
E
= 0
Emitter base cuttoff current
V
EB
= 2 V, I
C
= 0
Emitter base cuttoff current
V
EB
= 1 V, I
C
= 0
Notes:
1.) This Test assures V(BR)
CE0
> 12V
Semiconductor Group
2 of 5
Draft B, September 1999
1.)
Symbol
min.
I
CBO
I
CEX
I
CBO
I
EBO
I
EBO
-
-
-
-
-
Values
typ.
-
-
-
-
-
max.
100
200
50
25
0.5
Unit
µA
µA
nA
µA
µA
Collector-base cutoff current
BFY182
Electrical Characteristics
(continued)
Parameter
DC Characteristics
Base-Emitter forward voltage
I
E
= 20 mA, I
C
= 0
DC current gain
I
C
= 5 mA, V
CE
= 6 V
AC Characteristics
Transition frequency
I
C
= 15 mA, V
CE
= 5 V, f = 500 MHz
I
C
= 15 mA, V
CE
= 8 V, f = 500 MHz
Collector-base capacitance
V
CB
= 10 V, V
BE
= vbe = 0, f = 1 MHz
Collector-emitter capacitance
V
CE
= 10 V, V
BE
= vbe = 0, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5V, V
CB
= vcb = 0, f = 1 MHz
Noise Figure
I
C
= 5 mA, V
CE
= 5 V, f = 2 GHz,
Z
S
= Z
Sopt
Power gain
I
C
= 15 mA, V
CE
= 5V, f = 2 GHz
Z
S
= Z
Sopt
, Z
L
= Z
Lopt
Transducer gain
I
C
= 15 mA, V
CE
= 5 V, f = 2 GHz
Z
S
= Z
L
= 50
Ω
Notes.:
2
|S
21e
|
Symbol
min.
V
FBE
h
FE
-
55
Values
typ.
-
100
max.
1
170
Unit
V
-
f
T
6.5
-
C
CB
C
CE
C
EB
F
-
-
-
-
7.5
8
0.26
0.34
0.8
2.4
-
-
0.36
-
1.1
2.9
GHz
pF
pF
pF
dB
Gma
1.)
13.5
14.5
-
dB
10
11
-
dB
1)
G
ma
=
S
21
(
k
−
k
2
−
1)
,
S
12
G
ms
=
S
21
S
12
Semiconductor Group
3 of 5
Draft B, September 1999
BFY182
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level.
Ordering Form:
Ordering Code: Q..........
BFY182 (ql)
(ql): Quality Level
Ordering Example:
Ordering Code:
BFY182 ES
Q62702F1714
For BFY182 in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
-
HiRel
Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
++89 234 24480
++89 234 28438
martin.wimmers@infineon.com
Infineon -Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
Semiconductor Group
4 of 5
Draft B, September 1999
BFY182
Micro-X1 Package
4
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
3
1
2
Semiconductor Group
5 of 5
Draft B, September 1999
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