BFY182ES datasheet, PDF - EEWORLD Datasheet

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BFY182ES: DescriptionHiRel NPN Silicon RF Transistor; CategoryDiscrete semiconductor The transistor; File Size30KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BFY182ES Overview

HiRel NPN Silicon RF Transistor

BFY182ES Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	MICROWAVE, X-CXMW-F4
Contacts	4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	EMITTER
Maximum collector current (IC)	0.035 A
Collector-based maximum capacity	0.36 pF
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	55
highest frequency band	L BAND
JESD-30 code	X-CXMW-F4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED
Package form	MICROWAVE
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	ESA-SCC-5611/006
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	UNSPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	8000 MHz

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BFY182

HiRel

NPN Silicon RF Transistor

•

HiRel

Discrete and Microwave Semiconductor

For low noise, high-gain broadband amplifiers at collector

currents from 1 mA to 20 mA.

Hermetically sealed microwave package

= 8 GHz

F = 2.4 dB at 2 GHz

Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 04

ESD: Electrostatic discharge

sensitive device,

observe handling precautions!

Type

BFY182 (ql)

(ql) Quality Level:

Marking

Ordering Code

see below

Pin Configuration

Package

Micro-X1

P: Professional Quality,

H: High Rel Quality,

S: Space Quality,

ES: ESA Space Quality,

Ordering Code:

Q62702F1608

on request

Q62702F1714

(see order instructions for ordering example)

Semiconductor Group

1 of 5

Draft B, September 1999

BFY182ES Related Products

	BFY182ES	BFY182	BFY182H	BFY182P	BFY182S
Description	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor
package instruction	MICROWAVE, X-CXMW-F4	-	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4
Contacts	4	-	4	4	4
Reach Compliance Code	compli	-	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	EMITTER	-	EMITTER	EMITTER	EMITTER
Maximum collector current (IC)	0.035 A	-	0.035 A	0.035 A	0.035 A
Collector-based maximum capacity	0.36 pF	-	0.36 pF	0.36 pF	0.36 pF
Collector-emitter maximum voltage	12 V	-	12 V	12 V	12 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	55	-	55	55	55
highest frequency band	L BAND	-	L BAND	L BAND	L BAND
JESD-30 code	X-CXMW-F4	-	X-CXMW-F4	X-CXMW-F4	X-CXMW-F4
JESD-609 code	e3	-	e3	e3	e3
Number of components	1	-	1	1	1
Number of terminals	4	-	4	4	4
Maximum operating temperature	200 °C	-	200 °C	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package form	MICROWAVE	-	MICROWAVE	MICROWAVE	MICROWAVE
Polarity/channel type	NPN	-	NPN	NPN	NPN
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES
Terminal surface	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	FLAT	-	FLAT	FLAT	FLAT
Terminal location	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
transistor applications	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	8000 MHz	-	8000 MHz	8000 MHz	8000 MHz

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