Philips Semiconductors
Product specification
Optical receiver modules
FEATURES
•
Excellent linearity
•
Low noise
•
Excellent flatness
•
Standard CATV outline
•
Rugged construction
•
Gold metallization ensures
excellent reliability
•
High optical input power range.
APPLICATIONS
CATV optical node systems
operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
BGE847BO; BGE847BO/FC0;
BGE847BO/SC0
PINNING
PIN
1
2
3
4
5
7
8
9
DESCRIPTION
monitor current
common
common
+V
B
of the photo diode
+V
B
of the amplifier
common
common
output
High dynamic range optical receiver
amplifier modules in a standard
SOT115 package where the
non-jacketed fibre has either no
connector or has an FC/APC or
SC/APC connector.
The amplifier supply voltage pin and
the photo diode bias voltage pin both
connect to 24 V (DC).
The modules have a monomode
optical input suitable for
1290 to 1600 nm wavelengths, a
terminal to monitor the photo diode
current and an electrical output
having a characteristic impedance
of 75
Ω.
alfpage
ok, halfpage
ok, halfpage
1
2
3
4
5
7
8
9
1
2
3
4
5
7
8
9
1
2
3
4
5
7
8
9
Side view
MBK044
Side view
Side view
MBL040
MBL041
Fig.1
Simplified outline
SOT115T
(BGE847BO).
Fig.2
Simplified outline
SOT115X
(BGE847BO/FC0).
Fig.3
Simplified outline
SOT115Y
(BGE847BO/SC0).
QUICK REFERENCE DATA
SYMBOL
f
S
22
d
2
F
I
tot
HANDLING
Fibreglass optical coupling: maximum tensile strength = 5 N; minimum bending radius = 35 mm.
2000 Apr 04
2
PARAMETER
frequency range
output return losses
optical input return losses
second order distortion
equivalent noise input
total current consumption (DC)
f = 854.5 MHz
f = 40 to 450 MHz
V
B
= 24 V
f = 40 to 870 MHz
CONDITIONS
MIN.
40
11
45
−
−
175
−
−
−57
7
205
MAX.
870
UNIT
MHz
dB
dB
dBc
pA/√Hz
mA
Philips Semiconductors
Product specification
Optical receiver modules
BGE847BO; BGE847BO/FC0;
BGE847BO/SC0
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
f
T
stg
T
mb
P
in
ESD
PARAMETER
frequency range
storage temperature
operating mounting base temperature
optical input power
ESD sensitivity
continuous
human body model;
R = 1.5 kΩ; C = 100 pF
CONDITIONS
MIN.
40
−40
−20
−
500
MAX.
870
+85
+85
5
−
UNIT
MHz
°C
°C
mW
V
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
B
= 24 V; T
mb
= 30
°C;
Z
S
= Z
L
= 75
Ω.
SYMBOL
S
responsivity
BGE847BO
BGE847BO/FC0, BGE847BO/SC0
FL
S
22
d
2
flatness straight line (peak to valley)
output return losses
optical input return losses
second order distortion
f
m
= 446.5 MHz;
notes 1 and 3
f
m
= 746.5 MHz;
notes 1 and 4
f
m
= 854.5 MHz;
notes 1 and 5
d
3
F
third order distortion
equivalent noise input
f
m
= 853.25 MHz;
notes 2 and 6
f = 40 to 450 MHz
f = 450 to 750 MHz
f = 750 to 870 MHz
s
λ
λ
L
spectral sensitivity
optical wavelength
length of optical fibre
BGE847BO
BGE847BO/FC0, BGE847BO/SC0
I
tot
I
pin 4
total current consumption (DC)
photo diode bias current (DC)
fibre; SM type; 9/125
µm
1
746
175
−
−
861
205
25
m
mm
mA
mA
λ
= 1310
±20
nm
λ
= 1550
±20
nm
−
−
−
−
0.85
0.9
1290
f = 40 to 870 MHz
f = 40 to 870 MHz
PARAMETER
CONDITIONS
λ
= 1300 nm
800
750
−
11
45
−
−
−
1
−
−
−68
−63
−57
−75
7
9
10.5
−
−
1600
V/W
V/W
dB
dB
dB
dB
dB
dB
dB
pA/√Hz
pA/√Hz
pA/√Hz
A/W
A/W
nm
MIN.
MAX.
UNIT
2000 Apr 04
3
Philips Semiconductors
Product specification
Optical receiver modules
Notes
BGE847BO; BGE847BO/FC0;
BGE847BO/SC0
1. Two laser test; each laser with a modulation index of 40%; P
opt
= 1 mW (total).
2. Three laser test; each laser with a modulation index of 60%; P
opt
= 1 mW (total).
3. f
m
= 446.5 MHz; f
p
= 97.25 MHz; f
q
= 349.25 MHz.
4. f
m
= 746.5 MHz; f
p
= 133.25 MHz; f
q
= 613.25 MHz.
5. f
m
= 854.5 MHz; f
p
= 133.25 MHz; f
q
= 721.25 MHz.
6. f
m
= 853.25 MHz; f
p
= 133.25 MHz; f
q
= 265.25 MHz; f
r
= 721.25 MHz.
handbook, halfpage
Pin 1
10 kΩ
photo
current
1 kΩ
MLB151
Fig.4 Monitor current pin.
2000 Apr 04
4
Philips Semiconductors
Product specification
Optical receiver modules
PACKAGE OUTLINES
BGE847BO; BGE847BO/FC0;
BGE847BO/SC0
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; optical input; 8 gold-plated in-line leads
D
E
S2
Z
p
N1
N2
M
A2
1
A
L
S1
F
S
W
d
B
U2
Q
e
e1
q2
q1
y
M
B
p
y
M
B
y
M
B
b
w
M
2
3
4
5
7
8
9
N
SOT115T
M1
M2
c
U1
q
0
optical input
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
9.1
b
c
D
d
E
max. max. max.
e
e1
F
L
min.
8.8
5
scale
10 mm
S1
S2
U1
U2
max.
8
W
w
y
0.1
Z
max.
12
16.7 4.95
44.75
16.1 4.55
6-32 0.25
UNC
M
2.5
M1
1.6
M2
N
min.
N1
N2
5
1
p
4.15
3.85
Q
max.
2.4
q
q1
q2
S
4.2
mm 20.8
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7
0.38
10.7
0.9 1000
8.7
38.1 25.4 10.2
OUTLINE
VERSION
SOT115T
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-04-13
2000 Apr 04
5
Embedded System
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