DISCRETE SEMICONDUCTORS
DATA SHEET
BGY205
UHF amplifier module
Product specification
Supersedes data of May 1994
1996 May 21
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES
•
6 V nominal supply voltage
•
3.5 W pulsed output power
•
Easy control of output power by DC voltage.
APPLICATIONS
•
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY205 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
PINNING - SOT321B
PIN
1
2
3
4
Flange
RF input
V
C
V
S
RF output
ground
BGY205
DESCRIPTION
1
Top view
2
3
4
MSA489
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°C.
MODE OF
OPERATION
Pulsed;
δ
= 1 : 8
f
(MHz)
880 to 915
V
S
(V)
6
V
C
(V)
≤4
P
L
(W)
3.5
G
p
(dB)
≥32.5
η
(%)
≥40
Z
S
; Z
L
(Ω)
50
1996 May 21
2
Philips Semiconductors
Product specification
UHF amplifier module
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
PARAMETER
−
−
−
−
−40
−30
MIN.
MAX.
8.5
4.5
7
4
+100
+100
BGY205
UNIT
V
V
mW
W
°C
°C
CHARACTERISTICS
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V; V
C
≤
4 V; f = 880 to 915 MHz; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs;
unless
otherwise specified.
SYMBOL
I
Q
I
C
P
L
G
p
η
H
2
H
3
VSWR
in
PARAMETER
leakage current
control current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
V
C
= 0.5 V
adjust V
C
for P
L
= 3.5 W
V
C
= 4 V
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
adjust V
C
for P
L
= 3.5 W
P
D
= 0 to 6 dBm; V
S
= 5 to 8.5 V;
V
C
= 0 to 4 V; P
L
≤
3.5 W;
VSWR
≤
6 : 1 through all phases
V
C
= 0.5 V
R1 = 0; C1 = 0; see Fig.16
P
D
with 3% AM; f = 100 kHz;
P
L
= 3.5 mW to 3.5 W
P
L
= 3.5 W; bandwidth = 30 kHz;
20 MHz above transmitter band
V
S
= 8.5 V; adjust V
C
for P
L
= 3.5 W;
VSWR
≤
10 : 1 through all phases
CONDITIONS
−
−
3.5
32.5
40
−
−
−
−
MIN.
−
−
−
−
45
−
−
−
−
TYP.
MAX.
100
500
−
−
−
−40
−40
2:1
−60
dBc
UNIT
µA
µA
W
dB
%
dBc
dBc
isolation
control bandwidth
AM-AM conversion
P
n
noise power
ruggedness
−
1
−
−
−
−
−
−
−36
−
12
−85
dBm
MHz
%
dBm
no degradation
1996 May 21
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG742
handbook, halfpage
40
40
PL
(dBm)
30
915 MHz
880 MHz
MBG741
PL
(dBm)
30
20
880 MHz
20
915 MHz
10
0
10
−10
−20
−20
0
2.5
2.7
2.9
3.1
3.3
3.5
VC (V)
−15
−10
−5
0
5
PD (dBm)
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Z
S
= Z
L
= 50
Ω;
V
S
= 6 V; P
L
= 3.5 mW;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.2
Load power as a function of control voltage;
typical values.
Fig.3
Load power as a function of drive power;
typical values.
output amplitude modulation (%)
handbook, halfpage
12
MBG740
MBG739
handbook, halfpage
50
10
η
(%)
40
915 MHz
8
890 MHz
6
880 MHz
4
915 MHz
2
30
20
0
0
10
20
30
PL (dBm)
40
10
0
1
2
3
P L (W)
4
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V; T
mb
= 25
°C;
δ
= 1 : 8; t
p
= 575
µs;
input amplitude modulation = 3%.
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V;
T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.4
Output amplitude modulation as a
function of load power; typical values.
Fig.5
Efficiency as a function of load power;
typical values.
1996 May 21
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY205
MBG736
MBG735
handbook, halfpage
5
handbook, halfpage
5
PL
(W)
4
VC
(V)
4
3
3
2
2
1
1
0
880
890
900
910
f (MHz)
920
0
880
890
900
910
f (MHz)
920
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V;
V
C
= 4 V; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V;
P
L
= 3.5 W; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Fig.6
Load power as a function of frequency;
typical values.
Fig.7
Control voltage as a function of
frequency; typical values.
30
H 2 , H3
(dBc)
40
H2
50
H3
60
MBG738
MBG734
handbook, halfpage
10
phase
(deg)
−10
−30
70
−50
80
880
890
900
910
f (MHz)
920
−70
0
1
2
f (MHz)
3
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V;
P
L
= 3.5 W; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs.
Z
S
= Z
L
= 50
Ω;
P
D
= 3 dBm; V
S
= 6 V; P
L
= 15 to 35.4 dBm;
f = 880 to 915 MHz; T
mb
= 25
°C; δ
= 1 : 8; t
p
= 575
µs;
R1 = 0; C1 = 0.
Fig.8
Harmonics as a function of
frequency; typical values.
Fig.9
Control loop phase as a function of
frequency on the control pin; typical values.
1996 May 21
5
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