SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
OptiMOS
=
Power-Transistor
Feature
N-Channel
Product Summary
V
DS
R
DS(on)
I
D
P- TO262 -3-1
P- TO263 -3-2
55
8
80
P- TO220 -3-1
V
A
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
Type
SPP80N06S2-08
SPB80N06S2-08
SPI80N06S2-08
Parameter
Package
Ordering Code
P- TO220 -3-1 Q67060-S4283
P- TO263 -3-2 Q67060-S4284
P- TO262 -3-1 Q67060-S7430
Marking
2N0608
2N0608
2N0608
Value
80
80
Unit
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Symbol
I
D
Continuous drain current
1)
T
C
=25°C
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
320
450
21.5
6
±20
215
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode dv/dt
I
S
=80A,
V
DS
=44V,
di/dt
=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
2003-05-09
m
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
Symbol
min.
R
thJC
R
thJA
R
thJA
Values
typ.
0.46
-
-
-
max.
0.7
62
62
40
Unit
-
-
-
-
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
Values
typ.
-
3
max.
-
4
Unit
55
2.1
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=150µA
Zero gate voltage drain current
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V, 125°C,
2)
µA
-
-
0.01
1
1
6.5
1
100
100
8
nA
m
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
R
DS(on)
-
-
V
GS
=10V,
I
D
=58A
1Current limited by bondwire ; with an
R
thJC
= 0.7K/W the chip is able to carry
I
D
= 109A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-09
Drain-source on-state resistance
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
Electrical Characteristics
Parameter
Dynamic Characteristics
I
D
=58A
Symbol
Conditions
min.
Values
typ.
77
2860
740
190
14
15
32
14
max.
-
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=30V,
V
GS
=10V,
I
D
=80A,
Q
gs
Q
gd
Q
g
V
DD
=44V,
I
D
=80A
V
DD
=44V,
I
D
=80A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=44V,
I
D
=80A
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=80A
V
R
=30V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
C
=25°C
Page 3
R
G
=3.3
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
40
-
-
-
-
-
-
-
S
3800 pF
980
280
20
23
50
20
ns
-
-
--
--
15
30
72
6
20
44
96
--
nC
V
-
-
-
-
-
-
-
0.9
53
85
80
320
1.3
65
110
A
V
ns
nC
2003-05-09
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
1 Power dissipation
P
tot
=
f
(T
C
)
parameter:
V
GS
6 V
240
SPP80N06S2-08
2 Drain current
I
D
=
f
(T
C
)
parameter:
V
GS
10 V
90
SPP80N06S2-08
W
200
180
A
70
60
P
tot
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140 160
°C
190
I
D
50
40
30
20
10
0
0
20
40
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
3
SPP80N06S2-08
4 Max. transient thermal impedance
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPP80N06S2-08
K/W
A
t
p = 8.5µs
10 µs
10
0
/
I
D
I
D
V
DS
10
2
Z
thJC
on
)
R
DS
(
100 µs
10
-1
=
1 ms
10
-2
10
1
10
-3
single pulse
10
0 -1
10
10
-4 -7
10
10
0
10
1
V
10
2
10
-6
V
DS
Page 4
60
80
100 120 140 160
°C
190
T
C
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2003-05-09
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
190
SPP80N06S2-08
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
26
SPP80N06S2-08
i
160
140
V
GS [V]
a
4.5
b
c
d
4.8
5.0
5.2
5.5
5.8
6.0
6.5
10.0
R
DS(on)
I
D
120
100
80
g
e
h
f
g
h
i
60
40
20
0
0
e
f
d
c
a
b
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
160
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
80
A
120
I
D
100
g
fs
80
60
40
20
0
0
1
2
3
4
5
V
V
GS
7
Page 5
22
20
18
16
14
12
10
8
6
4
2
0
0
d
5.2
A
P
tot
= 215W
m
d
e
f
g
h
i
V
GS
[V] =
e
f
5.5 5.8
g
6.0
h
i
6.5 10.0
20
40
60
80
100
A
130
I
D
S
60
50
40
30
20
10
0
0
20
40
60
80
110
A
I
D
2003-05-09
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