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SPB80N06S2-08

Description
80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size560KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

SPB80N06S2-08 Overview

80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

SPB80N06S2-08 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeD2PAK
package instructionPLASTIC, TO-263, 3 PIN
Contacts4
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)450 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)80 A
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)215 W
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
OptiMOS
=
Power-Transistor
Feature
N-Channel

Product Summary
V
DS
R
DS(on)
I
D
P- TO262 -3-1
P- TO263 -3-2
55
8
80
P- TO220 -3-1
V
A
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
Type
SPP80N06S2-08
SPB80N06S2-08
SPI80N06S2-08
Parameter
Package
Ordering Code
P- TO220 -3-1 Q67060-S4283
P- TO263 -3-2 Q67060-S4284
P- TO262 -3-1 Q67060-S7430
Marking
2N0608
2N0608
2N0608
Value
80
80
Unit
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Symbol
I
D
Continuous drain current
1)
T
C
=25°C
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
320
450
21.5
6
±20
215
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode dv/dt
I
S
=80A,
V
DS
=44V,
di/dt
=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1

I
D
=80 A ,
V
DD
=25V,
R
GS
=25
2003-05-09

m





SPB80N06S2-08 Related Products

SPB80N06S2-08 SPP80N06S2-08 SPI80N06S2-08
Description 80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Parts packaging code D2PAK TO-220AB TO-262AA
package instruction PLASTIC, TO-263, 3 PIN PLASTIC, TO-220, 3 PIN IN-LINE, R-PSIP-T3
Contacts 4 3 3
Reach Compliance Code _compli unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 450 mJ 450 mJ 450 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 80 A 80 A 80 A
Maximum drain current (ID) 80 A 80 A 80 A
Maximum drain-source on-resistance 0.008 Ω 0.008 Ω 0.008 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 215 W 215 W 215 W
Maximum pulsed drain current (IDM) 320 A 320 A 320 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO NO
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON
Maker Infineon - Infineon
JESD-609 code e0 e3 -
Terminal surface TIN LEAD MATTE TIN -
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